ssm6l35fe TOSHIBA Semiconductor CORPORATION, ssm6l35fe Datasheet - Page 3
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ssm6l35fe
Manufacturer Part Number
ssm6l35fe
Description
Toshiba Field-effect Transistor Silicon N / P Channel Mos Type
Manufacturer
TOSHIBA Semiconductor CORPORATION
Datasheet
1.SSM6L35FE.pdf
(8 pages)
Q1 Switching Time Test Circuit
Q2 Switching Time Test Circuit
Q1 Usage Considerations
the SSM6L35FE). Then, for normal switching operation, V
than V
Q2 Usage Considerations
of the SSM6L35FE). Then, for normal switching operation, V
than V
Handling Precaution
protected against electrostatic discharge. Operators should wear antistatic clothing, and containers and other objects that
come into direct contact with devices should be made of antistatic materials.
Let V
Take this into consideration when using the device.
Let V
Take this into consideration when using the device.
When handling individual devices that are not yet mounted on a circuit board, make sure that the environment is
(a) Test Circuit
(a) Test Circuit
−
2.5V
th.
th.
th
th
0
This relationship can be expressed as: V
This relationship can be expressed as: V
be the voltage applied between gate and source that causes the drain current (I
be the voltage applied between gate and source that causes the drain current (I
2.5 V
10 μs
V
D.U. ≤ 1%
V
(Z
Common Source
Ta = 25°C
DD
IN
out
0
V
D.U. ≤ 1%
V
(Z
Common Source
Ta = 25°C
: t
DD
IN
= -3 V
r
out
= 50 Ω)
, t
10 μs
: t
f
= 3 V
r
= 50 Ω)
< 5 ns
, t
IN
f
< 5 ns
IN
R
V
OUT
L
DD
R
V
OUT
L
DD
GS(off)
GS(off)
(b) V
(c) V
(c) V
(b) V
< V
< V
GS(on)
3
OUT
OUT
IN
GS(on)
th
th
IN
< V
< V
must be higher than V
GS(on).
GS(on).
must be higher than V
V
DS (ON)
V
V
V
2.5 V
DD
DS (ON)
DD
0 V
−2.5 V
0 V
t
on
10%
t
th,
on
10%
D
D
th,
t
and V
r
) to below (1 mA for the Q1 of
) to below (−1 mA for the Q2
10%
90%
t
r
and V
90%
10%
GS(off)
GS(off)
t
90%
off
t
SSM6L35FE
90%
off
must be lower
t
must be lower
f
2008-03-21
t
f