ssm6679gm Silicon Standard Corporation, ssm6679gm Datasheet

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ssm6679gm

Manufacturer Part Number
ssm6679gm
Description
P-channel Enhancement Mode Power Mosfet
Manufacturer
Silicon Standard Corporation
Datasheet
08/10/2007 Rev.1.00
PRODUCT SUMMARY
DESCRIPTION
ABSOLUTE MAXIMUM RATINGS
V
V
I
I
I
P
T
T
Rthj-a
THERMAL DATA
D
D
DM
STG
J
DS
GS
D
@T
@T
@T
Simple Drive Requirement
Low On-resistance
Fast Switching Characteristic
The advanced power MOSFETs from Silicon Standard Corp.
provide the designer with the best combination of fast switching,
ruggedized device design, low on-resistance and cost-effectiveness.
The SO-8 package is universally preferred for all commercial-
industrial surface mount applications and suited for low voltage
applications such as DC/DC converters.
A
A
A
=25℃
=70℃
Pb-free; RoHS-compliant
=25℃
Symbol
Symbol
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current
Total Power Dissipation
Linear Derating Factor
Storage Temperature Range
Operating Junction Temperature Range
Thermal Resistance Junction-ambient
Parameter
Parameter
www.SiliconStandard.com
P-CHANNEL ENHANCEMENT MODE
1
3
3
D
D
SO-8
D
3
D
S
S
S
Max.
G
POWER MOSFET
-55 to 150
-55 to 150
Rating
BV
R
I
± 25
0.02
-8.9
D
-30
-14
-50
2.5
DS(ON)
DSS
Value
50
G
SSM6679GM
9mΩ
Units
W/℃
℃/W
-30V
-14A
Unit
W
V
V
A
A
A
D
S
1

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ssm6679gm Summary of contents

Page 1

... Operating Junction Temperature Range J THERMAL DATA Symbol Rthj-a Thermal Resistance Junction-ambient 08/10/2007 Rev.1.00 P-CHANNEL ENHANCEMENT MODE SO-8 S Parameter Parameter 3 Max. www.SiliconStandard.com SSM6679GM POWER MOSFET BV -30V DSS R 9mΩ DS(ON) I -14A Rating Units -30 V ± -14 A -8 ...

Page 2

... DS V =-4. =-15V =3.3Ω,V =-10V =15Ω = =-25V DS f=1.0MHz Test Conditions 2 I =-2A =-14A dI/dt=100A/µs www.SiliconStandard.com SSM6679GM Min. Typ. Max. Units -30 - =-1mA - - ±100 - ...

Page 3

... A D =25 ℃ ℃ ℃ ℃ T 1.6 A 1.4 1.2 1.0 0.8 0.6 - Fig 4. Normalized On-Resistance = -50 0.8 1 1.2 1.4 Fig 6. Gate Threshold Voltage v.s. www.SiliconStandard.com SSM6679GM -10V 150 C -7.0V A -5.0V -4. -3 Drain-to-Source Voltage ( - =-10V 100 Junction Temperature ( ...

Page 4

... Fig 10. Typical Capacitance Characteristics 1 1ms 0.1 10ms 100ms 1s 0.01 DC 0.001 10 100 0.0001 Fig 8. Effective Transient Thermal Impedance -4. d(off) f www.SiliconStandard.com SSM6679GM f=1.0MHz Ciss Coss Crss Drain-to-Source Voltage (V) DS Duty factor=0.5 0.2 0.1 0. Single Pulse Duty factor = t/T ...

Page 5

... No license is granted, whether expressly or by implication, in relation to the use of any products described herein or to the use of any information provided herein, under any patent or other intellectual property rights of Silicon Standard Corporation or any third parties. 08/10/2007 Rev.1.00 www.SiliconStandard.com SSM6679GM 5 ...

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