ssm6679gm Silicon Standard Corporation, ssm6679gm Datasheet - Page 3

• Manufacturer Part Number: ssm6679gm
• Description: P-channel Enhancement Mode Power Mosfet
• Manufacturer: Silicon Standard Corporation

08/10/2007 Rev.1.00
280
240
200
160
120
80
40
14
12
10
0
8
6
14
12
10
8
6
4
2
0
3
0
0
Fig 1. Typical Output Characteristics
Fig 3. On-Resistance v.s. Gate Voltage
Fig 5. Forward Characteristic of
T
T
A
j
= 25
=150
0.2
-V
-V
-V
Reverse Diode
SD
1
DS
o
GS
o
C
5
C
, Source-to-Drain Voltage (V)
, Drain-to-Source Voltage (V)
0.4
, Gate-to-Source Voltage (V)
2
0.6
7
0.8
3
T
I
T
1
j
=25
D
A
9
= -11 A
=25 ℃ ℃ ℃ ℃
V
4
o
G
C
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1.2
= -3.0 V
-4.5V
-5.0V
-7.0V
-10V
1.4
5
11
150
100
1.8
1.6
1.4
1.2
1.0
0.8
0.6
50
0
3
2
1
0
-50
-50
0
Fig 2. Typical Output Characteristics
Fig 4. Normalized On-Resistance
Fig 6. Gate Threshold Voltage v.s.
T
A
I
V
D
= 150
G
= -14 A
1
=-10V
v.s. Junction Temperature
Junction Temperature
T
T
o
j
j
0
0
-V
C
, Junction Temperature (
, Junction Temperature (
DS
2
, Drain-to-Source Voltage (V)
50
50
3
4
SSM6679GM
100
100
o
o
C)
C)
V
G
5
= -3.0 V
-7.0V
-5.0V
-4.5V
-10V
150
150
6
3