ssm6g18nu TOSHIBA Semiconductor CORPORATION, ssm6g18nu Datasheet

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ssm6g18nu

Manufacturer Part Number
ssm6g18nu
Description
Silicon P Channel Mos Type / Silicon Epitaxial Schottky Barrier Diode
Manufacturer
TOSHIBA Semiconductor CORPORATION
Datasheet
Power Management Switch Applications
Absolute Maximum Ratings
MOSFET
Schottky Barrier Diode(Ta = 25°C)
MOSFET and Diode (Ta = 25°C)
Combined a P-channel MOSFET and a schottky barrier diode in one
package.
Low R
Drain-Source voltage
Gate-Source voltage
Drain current
Power dissipation
Channel temperature
Reverse voltage
Average forward current
Peak one cycle surge forward
current(10ms)
Junction temperature
Storage temperature range
Note:
Note 1: The junction temperature should not exceed 150°C during use.
Note 2: Mounted on FR4 board.
R
R
R
R
DS(ON)
DS(ON)
DS(ON)
DS(ON)
DS (ON)
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly
even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute
maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
(25.4 mm × 25.4 mm × 1.6 mm, Cu Pad: 645mm
(
= 261 mΩ (max) (@V
= 185 mΩ (max) (@V
= 143 mΩ (max) (@V
= 112 mΩ (max) (@V
Characteristics
Characteristics
Characteristics
Ta = 25°C
and Low V
Silicon P Channel MOS Type / Silicon Epitaxial Schottky Barrier Diode
)
Pulse
DC
F
GS
GS
GS
GS
SSM6G18NU
= -4.5 V)
= -1.5V)
= -1.8 V)
= -2.5 V)
I
DP
P
I
Symbol
Symbol
Symbol
D
D
V
V
t <10s
I
T
FSM
T
(Note 1)
(Note 2)
V
GSS
DSS
(Note 1)
I
T
stg
ch
O
R
j
−55 to 150
Rating
Rating
Rating
−2.0
−4.0
−20
150
150
1.0
5.0
±8
30
1
2
1
2
)
Unit
Unit
Unit
°C
°C
°C
W
V
V
A
V
A
A
Weight: 8.5 mg (typ.)
JEDEC
JEITA
TOSHIBA
UDFN6
0.05
*BOTTOM VIEW
0.3
M
±
0.075
A
0.65
B
6
1
±
0.075
0.65
2.0
0.95
2
5
±
SSM6G18NU
0.1
1. Anode
2. NC
3. Drain
0.65
0.65
±
3
4
2-2Y1A
0.075
2010-09-30
B
0.13
4. Source
5. Gate
6. Cathode
A
0.05
Unit: mm
M
A
0~0.05
B

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ssm6g18nu Summary of contents

Page 1

... DP P (Note <10s 2 T 150 ch Symbol Rating Unit 1 5.0 FSM T 150 j Symbol Rating Unit −55 to 150 T stg SSM6G18NU 2.0 0.1 ± *BOTTOM VIEW 0.65 0. 0.3 0.075 ± 0. °C 0.65 0.075 0.65 0.075 ± ± 1. Anode ...

Page 2

... G Duty < < Common source ( 25°C OUT requires higher voltage than V GS (on) < V < (off (on) 2 SSM6G18NU Min Typ. Max ⎯ ⎯ -20 ⎯ ⎯ (Note 4) -15 ⎯ ⎯ -1 ⎯ ⎯ ±1 ⎯ -0.3 -1.0 ⎯ (Note 3) 2 ...

Page 3

... MHz vary depending on board material, board area, board thickness D Equivalent Circuit(Top View SSM6G18NU Min Typ. Max ⎯ ⎯ 0.31 ⎯ ⎯ 0.36 ⎯ 0.38 0.45 0.48 0.58 ⎯ ⎯ ⎯ 120 Pin Condition(Top View) C ...

Page 4

... -1.0 A Common Source Pulse test 300 200 Ta = 100 °C 100 - ° (V) GS -1.0 -0 -1.5 V -0.5 100 150 4 SSM6G18NU I – Common Source Pulse test - 100 °C 25 °C -25 °C -1.0 0 Gate–source voltage V ( – (ON) ...

Page 5

... C iss t f 100 oss 10 C rss -100 -0.001 ( SSM6G18NU I – -25 ° =100 °C 25 °C 0.5 1.0 Drain–source voltage V ( – Common Source - -2 ° 4.7Ω ...

Page 6

... Cu Pad : 645 mm b: Mounted on FR4 board 1200 (25.4mm × 25.4mm × 1.6mm , Cu Pad : 2.13mm 1000 a a 800 600 400 b 200 100 1000 -40 -20 6 SSM6G18NU P – 100 120 140 160 Ambient temperature Ta (°C) 2010-09-30 ...

Page 7

... Ta=75℃ 10 50℃ 1 0.1 0.01 0.001 0 0.1 0.2 0.3 FORWARD VOLTAGE 1000 100 REVERSE VOLTAGE V F 1000 100 25℃ 0℃ 10 -25℃ 1 0.4 0.5 0 f=1MHz Ta=25℃ ( SSM6G18NU Ta=75℃ 50℃ 25℃ REVERSE VOLTAGE V (V) R 2010-09-30 30 ...

Page 8

... Please contact your TOSHIBA sales representative for details as to environmental matters such as the RoHS compatibility of Product. Please use Product in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances, including without limitation, the EU RoHS Directive. TOSHIBA assumes no liability for damages or losses occurring as a result of noncompliance with applicable laws and regulations. 8 SSM6G18NU 2010-09-30 ...

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