ssm3k16ct TOSHIBA Semiconductor CORPORATION, ssm3k16ct Datasheet - Page 4

• Manufacturer Part Number: ssm3k16ct
• Description: Toshiba Field Effect Transistor Silicon N-channel Mos Type
• Manufacturer: TOSHIBA Semiconductor CORPORATION

500
300
100
250
200
150
100
100
0.5
0.3
50
30
10
30
50
50
10
5
3
1
5
3
1
0
0.1
1
0
Common source
V DS = 3 V
Ta = 25°C
Common source
V GS = 0 V
f = 1 MHz
Ta = 25°C
20
0.3
Drain-Source voltage V DS (V)
Ambient temperature Ta (°C)
0.5
40
Drain current
10
1
60
⎪Y
P
C – V
D
fs
– Ta
80
⎪ – I
3
Mounted on FR4 board
(10 mm × 10 mm × 1.0 t, Cu
Pad: 100 mm
DS
5
D
I D (mA)
100
100
10
120
2
)
C oss
C rss
C iss
30
140
50
1000
100
160
4
5000
3000
1000
250
200
150
100
500
300
100
50
50
30
10
0
0.1
0
Common source
V GS = 0 V
Ta = 25°C
t off
G
t f
−0.2
t on
t r
Drain-Source voltage V DS (V)
−0.4
Drain current I D (mA)
D
S
1
I
−0.6
DR
I DR
t – I
– V
D
−0.8
DS
10
−1
Common source
V DD = 3 V
V GS = 0~2.5 V
Ta = 25°C
SSM3K16CT
−1.2
2007-11-01
−1.4
100