ssm3k14t TOSHIBA Semiconductor CORPORATION, ssm3k14t Datasheet
ssm3k14t
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ssm3k14t Summary of contents
Page 1
... V V GSS I 4 (Note 2) 8 (Note 1) 0 1.25 °C T 150 ch −55~150 °C T stg 2 ) Equivalent Circuit and the drain power dissipation P th (ch-a) 1 SSM3K14T Unit: mm JEDEC ― JEITA ― TOSHIBA 2-3S1A Weight (typ.) vary according to D 2007-11-01 ...
Page 2
... R G D.U. < < (c) V OUT Common Source Ta = 25°C requires higher voltage than V GS (on) < V < (off (on) 2 SSM3K14T Min Typ. Max = 0 ⎯ ⎯ ±1 ⎯ ⎯ 30 ⎯ ⎯ 15 ⎯ ⎯ ⎯ 1.0 2.5 ⎯ (Note 3) 3.2 6.4 ⎯ ...
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... Gate-Source voltage 0.1 mA 2.5 Common Source 2 1.5 1 0.5 0 −25 125 150 0 Ambient temperature Ta (°C) 3 SSM3K14T I – 100°C −25°C 25° Common Source – (ON) GS Common Source 100°C 25 − ...
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... Drain-Source voltage V DS (V) 10 1000 500 300 100 0.01 −1 4 SSM3K14T C – iss C oss C rss 1 10 100 t – Common Source 0 Ω t off Ta = 25°C 0 Drain current I D (A) ...
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... DC 0.75 0.5 0. Ambient temperature Ta (°C) 100 r – Single pulse Mounted on FR4 board (25.4 mm × 25.4 mm × 1 pad: 645 mm 0 Pulse width tw (s) 5 SSM3K14T P – Mounted on FR4 board (25.4 mm × 25.4 mm × 1 pad: 645 100 125 150 2 ) 100 1000 2007-11-01 ...
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... Please contact your sales representative for product-by-product details in this document regarding RoHS compatibility. Please use these products in this document in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses occurring as a result of noncompliance with applicable laws and regulations. 6 SSM3K14T 20070701-EN GENERAL 2007-11-01 ...