ssm3j35fs TOSHIBA Semiconductor CORPORATION, ssm3j35fs Datasheet - Page 4

• Manufacturer Part Number: ssm3j35fs
• Description: Toshiba Field-effect Transistor Silicon P-channel Mos Type
• Manufacturer: TOSHIBA Semiconductor CORPORATION

10000
1000
1000
0.01
-0.8
-0.6
-0.4
-0.2
100
100
0.1
10
10
-1
−50
0
1
-0.1
0
G
Common Source
V GS = 0 V
t on
t off
t r
t f
0.2
Ta=100℃
Drain–source voltage V
Ambient temperature Ta (°C)
D
S
Drain current I
-1
0
0.4
I DR
I
0.6
DR
V
th
t – I
-10
– V
50
– Ta
-25°C
D
0.8
DS
D
25°C
(mA)
Common Source
I D = -1 mA
V DS = -3 V
DS
Common Source
V DD = -3 V
V GS = 0 to -2.5 V
Ta = 25°C
1
-100
100
(V)
1.2
-1000
150
1.4
4
1000
150
100
100
250
200
100
10
50
10
1
0
1
-0.1
-1
0
Common Source
V GS = 0 V
f = 1 MHz
Ta = 25°C
20
Drain–source voltage V
Ambient temperature Ta (°C)
Drain current I
40
-10
-1
60
⎪Y
P
C – V
D
fs
– Ta
80
⎪ – I
DS
D
D
100
-100
-10
(mA)
DS
Common Source
V DS = -3 V
Ta = 25°C
120
SSM3J35FS
C oss
C iss
C rss
(V)
140
2009-06-25
-1000
-100
160