2sd1113k Renesas Electronics Corporation., 2sd1113k Datasheet

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2sd1113k

Manufacturer Part Number
2sd1113k
Description
Silicon Npn Triple Diffused
Manufacturer
Renesas Electronics Corporation.
Datasheet
Application
Igniter
Outline
Absolute Maximum Ratings (Ta = 25°C)
Item
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current
Collector peak current
Collector power dissipation
Junction temperature
Storage temperature
Note:
1. Value at T
TO-220AB
C
= 25 C.
1
2
3
Silicon NPN Triple Diffused
2SD1113(K)
1. Base
2. Collector
3. Emitter
(Flange)
Symbol
V
V
V
I
I
P
Tj
Tstg
C
C(peak)
CBO
CEO
EBO
C
*
1
1
Ratings
300
300
7
6
10
40
150
–55 to +150
(Typ)
6 k
450
(Typ)
2
3
Unit
V
V
V
A
A
W
C
C

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2sd1113k Summary of contents

Page 1

Silicon NPN Triple Diffused Application Igniter Outline TO-220AB Absolute Maximum Ratings (Ta = 25°C) Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector peak current Collector power dissipation Junction temperature ...

Page 2

Electrical Characteristics (Ta = 25°C) Item Symbol Collector to base breakdown V (BR)CBO voltage Collector to emitter sustain V CEO(sus) voltage Emitter to base breakdown V (BR)EBO voltage Collector cutoff current I CEO DC current transfer ratio h FE ...

Page 3

Typical Output Characteristics Collector to emitter voltage V (V) CE Saturation Voltage vs. Collector Current 1.0 0.5 ...

Page 4

MAX 10.16 0.2 9.5 3.6 8.0 1.5 MAX 0.76 0.1 2.54 0.5 2.54 0.5 4.44 0.2 +0.1 1.26 0.15 -0.08 2.7 MAX 0.5 0.1 Hitachi Code JEDEC EIAJ Weight (reference value) Unit: mm TO-220AB Conforms Conforms 1.8 g ...

Page 5

Cautions 1. Hitachi neither warrants nor grants licenses of any rights of Hitachi’s or any third party’s patent, copyright, trademark, or other intellectual property rights for information contained in this document. Hitachi bears no responsibility for problems that may arise ...

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