2sd1113k Renesas Electronics Corporation., 2sd1113k Datasheet - Page 2

• Manufacturer Part Number: 2sd1113k
• Description: Silicon Npn Triple Diffused
• Manufacturer: Renesas Electronics Corporation.

2SD1113(K)
Electrical Characteristics (Ta = 25°C)
Item
Collector to base breakdown
voltage
Collector to emitter sustain
voltage
Emitter to base breakdown
voltage
Collector cutoff current
DC current transfer ratio
Collector to emitter saturation
voltage
Base to emitter saturation
voltage
Turn on time
Turn off time
Note:
2
60
40
20
1. Pulse test.
0
Maximum Collector Dissipation Curve
Case temperature T
50
Symbol
V
V
V
I
h
V
V
t
t
CEO
on
off
FE
100
(BR)CBO
CEO(sus)
(BR)EBO
CE(sat)
BE(sat)
C
( C)
Min
300
300
7
—
500
—
—
—
—
150
Typ
—
—
—
—
—
—
—
2.0
23
0.005
Max
500
—
—
100
—
1.5
2.0
—
—
0.01
1.0
0.1
50
10
0.5 1.0 2
Collector to emitter voltage V
Unit
V
V
V
V
V
A
s
s
i
I
C (peak)
C (max)
Ta = 25 C
1 shot pulse
Area of Safe Operation
5 10 20
Test conditions
I
I
f = 50 Hz, L = 10 mH
I
V
V
I
I
I
I
C
C
E
C
C
C
C
CE
CE
= 50 mA, I
= 0.1 mA, I
= 3 A, PW = 50 s,
= 4 A, I
= 4 A, I
= 4 A, I
= 4 A, I
= 300 V, R
= 2 V, I
B
B
B1
B1
50 100200 500
= 40 mA*
= 40 mA*
C
= –I
= –I
C
= 4 A*
E
= 0
BE
= 0
B2
B2
CE
=
= 40 mA
= 40 mA
1
(V)
1
1