74AUP1G00GM,115 NXP Semiconductors, 74AUP1G00GM,115 Datasheet - Page 4
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74AUP1G00GM,115
Manufacturer Part Number
74AUP1G00GM,115
Description
IC 2-IN NAND GATE LP 6-XSON
Manufacturer
NXP Semiconductors
Series
74AUPr
Datasheet
1.74AUP1G00GW125.pdf
(20 pages)
Specifications of 74AUP1G00GM,115
Number Of Circuits
1
Package / Case
6-XSON (Micropak™), SOT-886
Logic Type
NAND Gate
Number Of Inputs
2
Current - Output High, Low
4mA, 4mA
Voltage - Supply
0.8 V ~ 3.6 V
Operating Temperature
-40°C ~ 125°C
Mounting Type
Surface Mount
Product
NAND
Logic Family
74AUP
High Level Output Current
- 4 mA
Low Level Output Current
4 mA
Propagation Delay Time
17.5 ns
Supply Voltage (max)
3.6 V
Supply Voltage (min)
0.8 V
Maximum Operating Temperature
+ 125 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 40 C
Operating Temperature Range
- 40 C to + 125 C
Output Current
20 mA
Output Voltage
3.6 V
Power Dissipation
250 mW
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
568-2545-2
935278996115
935278996115
NXP Semiconductors
8. Limiting values
Table 5.
In accordance with the Absolute Maximum Rating System (IEC 60134). Voltages are referenced to GND (ground = 0 V).
[1]
[2]
9. Recommended operating conditions
Table 6.
10. Static characteristics
Table 7.
At recommended operating conditions; voltages are referenced to GND (ground = 0 V).
74AUP1G00
Product data sheet
Symbol
V
I
V
I
V
I
I
I
T
P
Symbol
V
V
V
T
Δt/ΔV
Symbol Parameter
T
V
IK
OK
O
CC
GND
stg
amb
amb
CC
I
O
tot
CC
I
O
IH
The minimum input and output voltage ratings may be exceeded if the input and output current ratings are observed.
For TSSOP5 packages: above 87.5 °C the value of P
For XSON6 packages: above 118 °C the value of P
= 25 °C
HIGH-level input voltage
Limiting values
Recommended operating conditions
Static characteristics
Parameter
supply voltage
input clamping current
input voltage
output clamping current
output voltage
output current
supply current
ground current
storage temperature
total power dissipation
Parameter
supply voltage
input voltage
output voltage
ambient temperature
input transition rise and fall rate
Conditions
V
V
V
V
CC
CC
CC
CC
All information provided in this document is subject to legal disclaimers.
Conditions
V
V
Active mode
Power-down mode
V
T
= 0.8 V
= 0.9 V to 1.95 V
= 2.3 V to 2.7 V
= 3.0 V to 3.6 V
amb
I
O
O
< 0 V
< 0 V
= 0 V to V
= −40 °C to +125 °C
Active mode
Conditions
Power-down mode; V
V
tot
Rev. 3 — 7 October 2010
CC
tot
derates linearly with 7.8 mW/K.
= 0.8 V to 3.6 V
derates linearly with 4.0 mW/K.
CC
CC
= 0 V
[1]
[1]
[1]
[2]
Min
0.70 × V
0.65 × V
1.6
2.0
Min
−0.5
−50
−0.5
-
−0.5
−0.5
-
−50
−65
-
-
Low-power 2-input NAND gate
CC
CC
74AUP1G00
Typ
-
-
-
-
Min
0.8
0
0
0
−40
0
Max
+4.6
-
+4.6
−50
V
+4.6
±20
+50
-
+150
250
CC
© NXP B.V. 2010. All rights reserved.
+ 0.5
Max
3.6
3.6
V
3.6
+125
200
Max
-
-
-
-
CC
Unit
V
mA
V
mA
V
V
mA
mA
mA
°C
mW
Unit
V
V
V
V
°C
ns/V
4 of 20
Unit
V
V
V
V