LMH6502MAX National Semiconductor Corporation, LMH6502MAX Datasheet - Page 3

• Manufacturer Part Number: LMH6502MAX
• Description: Wideband, Low Power, Linear-in-db Variable Gain Amplifier The LMH6502 is a Wideband DC Coupled Differential Input Voltage Controlled Gain Stage Followed BY a High-speed Current Feedback op Amp Which CAN Directly Drive a Low Impedance Load. Gain Adjus
• Manufacturer: National Semiconductor Corporation

Ambient Temperature
Frequency Domain Response
SSBW
SSBW
LSBW
SBWC
GFPL
GFPH
GFRL
GFRH
LPD
FDTH
TRS
TRL
TS
OS
SR
HD2
HD3
SNF
INV
DG
DP
Static, DC Performance
SGNL
GACCU
VOS
DVOS
Symbol
Absolute Maximum Ratings
If Military/Aerospace specified devices are required,
please contact the National Semiconductor Sales Office/
Distributors for availability and specifications.
Electrical Characteristics
A
Supply Voltage (V
I
ground, but maximum reliability will
be maintained if I
exceed...
Common Mode Input Voltage
V
V
V
OUT
V
IN
g
ref
Output is short circuit protected to
= +10, V
Differential Input Voltage
Differential Input Voltage
Differential Input Voltage
-3dB Bandwidth
-3dB Bandwidth
Gain Control Channel
Gain Flatness
Linear Phase Deviation
Feedthrough
Rise and Fall Time
Settling Time to
Overshoot
Slew Rate
2nd Harmonic Distortion
3rd Harmonic Distortion
Equivalent Output Noise
Differential Gain (Note 4)
Differential PIase (Note 4)
Integral Signal Nonlinearity
Gain Accuracy
For Nominal Max Gain = 20dB
Output Offset Voltage (Note 5)
Average Temperature Coefficient
Peaking
Peaking
Rolloff
Rolloff
Noise floor
Integrated noise
CC
=
±
OUT
CC
5V, R
)
Parameter
does not
L
±
= 100 , R
0.1%
f
= 1k , R
CLC520AJ
V
V
V
V
V
V
0.1MHz to 30MHz
0.1MHz to 20MHz
0.1MHz to 30MHz
0.1MHz to 60MHz
0.1MHz to 60MHz
V
0.5V Step
4.0V Step
2.0V Step
0.5V Step
4V Step
2V
2V
(÷10 for input noise) (Note
3)
1MHz to 200MHz
1MHz to 200MHz
at 3.58MHz
at 3.58MHz
V
R
OUT
OUT
OUT
OUT
IN
OUT
g
OUT
f
g
PP
PP
(Note 1)
= 1k , R
= 0V, V
= +0.2V, V
= 182 , V
, 20MHz
, 20MHz
<
<
= 4V
<
<
<
4.0V
60mA
±
±
±
0.5V
0.5V
0.5V
0.5V
Conditions
±
V
10V
V
V
7V
CC
CC
CC
PP
IN
PP
g
PP
PP
PP
PP
= -22dBm
= 182
g
g
(AJE only)
= +1VDC
= +2V; unless specified
3
Operating Ratings
Package
MDIP
SOIC
Junction Temperature
Operating Temperature Range
Storage Temperature Range
Lead Solder Duration (+300˚C)
ESD (human body model)
Thermal Resistance
+25˚C
2000
−132
0.15
0.15
0.04
Typ
160
140
140
100
−47
−60
800
100
0.1
0.5
-38
2.5
3.7
0.5
12
±
40
0
0
0
0
>
<
<
−40˚C
<
>
<
<
<
<
<
<
<
<
<
<
<
<
>
>
>
<
<
1450
−130
1000
<
±
110
−40
−50
150
400
0.4
0.7
0.4
1.3
1.2
-31
3.7
0.1
90
85
80
18
15
1.0
5
Max/Min (Note 2)
55˚C/W
45˚C/W
(
JC
>
<
<
+25˚C
<
>
>
>
<
<
<
)
<
<
<
<
<
>
<
<
1450
−130
1000
<
<
<
<
±
120
100
100
−40
−50
120
0.3
0.5
0.3
-31
0.1
–
80
18
15
0.5
1
1
3
5
−65˚C to +150˚C
>
<
<
+85˚C
<
−40˚C to +85˚C
>
>
>
<
<
<
<
<
<
<
<
<
<
<
>
<
<
1450
−129
1100
<
<
±
120
100
100
−35
−45
150
300
-31
0.4
0.7
0.4
1.3
1.2
0.2
80
18
15
0.5
3
5
105˚C/W
120˚C/W
www.national.com
(
JA
+150˚C
10 sec
)
V/µsec
500V
µV/˚C
Units
(1Hz)
MHz
MHz
MHz
MHz
dBm
dBc
dBc
deg
deg
mV
dB
dB
dB
dB
dB
µV
dB
ns
ns
ns
%
%
%