mga-655t6 Avago Technologies, mga-655t6 Datasheet - Page 2

• Manufacturer Part Number: mga-655t6
• Description: Low Noise Amplifer With Bypass Mode In Low Profle Package
• Manufacturer: Avago Technologies

Absolute Maximum Rating
Process Capability for Gain
LSL=12.8, Nominal=14.7, USL=17
Note:
Distribution data sample size is 500 samples taken from 3 different wafers and 3 different lots. Future wafers allocated to this product may have
nominal values anywhere between the upper and lower limits.
2
Product Consistency Distribution Charts
Figure 1. Gain @ 3.5 GHz , V
Symbol
V
V
P
P
T
T
diss
j
STG
dd
bypass
in,max
Parameter
Device Voltage, RF Output to Ground
Control Voltage
CW RF Input Power
Total Power Dissipation
Junction Temperature
Storage Temperature
d
3 V; V
bypass
[1]
T
2.7 V
A
= 25°C
[3]
Process Capability for NF
Nominal=1.2, USL=1.6
Figure 2. NF @ 3.5 GHz , V
Units
V
V
dBm
mW
°C
°C
d
3 V; V
Absolute Max.
4
4
+14
66
150
-65 to 150
bypass
2.7 V
Thermal Resistance
(V
Notes:
1. Operation of this device in excess of any of
2. Thermal resistance measured using Infra-
3. For module substrate temperature, Tsub,
Process Capability for Ids
Nominal=10.1, USL=14
Figure 3. I
dd
these limits may cause permanent damage.
Red Measurement Technique.
>94°C derate the device power at 50
mW per °C rise in board (module belly)
temperature.
= 3.0 V, I
ds
@ 3.5 GHz , V
d
= 10 mA), qjc = 75°C/W
[2,3]
d
3 V; V
bypass
2.7 V