74HCT04N,652 NXP Semiconductors, 74HCT04N,652 Datasheet - Page 5

• Manufacturer Part Number: 74HCT04N,652
• Description: IC INVERTER HEX TTL/LSTTL 14DIP
• Manufacturer: NXP Semiconductors
• Series: 74HCTr

Specifications of 74HCT04N,652

• Number Of Circuits: 6
• Logic Type: Inverter
• Package / Case: 14-DIP (0.300", 7.62mm)
• Number Of Inputs: 1
• Current - Output High, Low: 4mA, 4mA
• Voltage - Supply: 4.5 V ~ 5.5 V
• Operating Temperature: -40°C ~ 125°C
• Mounting Type: Through Hole
• Logic Family: 74HCT
• High Level Output Current: - 4 mA
• Low Level Output Current: 4 mA
• Propagation Delay Time: 8 ns
• Supply Voltage (max): 5.5 V
• Supply Voltage (min): 4.5 V
• Maximum Operating Temperature: + 125 C
• Minimum Operating Temperature: - 40 C
• Mounting Style: Through Hole
• Operating Supply Voltage: 4.5 V to 5.5 V
• Logical Function: Inverter
• Number Of Elements: 6
• Operating Supply Voltage (typ): 5V
• Package Type: DIP
• Operating Temp Range: -40C to 125C
• Pin Count: 14
• Quiescent Current: 2uA
• Technology: CMOS
• Mounting: Through Hole
• Operating Temperature Classification: Automotive
• Operating Supply Voltage (max): 5.5V
• Operating Supply Voltage (min): 4.5V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 568-1503-5; 74HCT04N; 933668900652

Philips Semiconductors
RECOMMENDED OPERATING CONDITIONS
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134); voltages are referenced to GND (ground = 0 V).
Notes
1. For DIP14 packages: above 70 C derate linearly with 12 mW/K.
2. For SO14 packages: above 70 C derate linearly with 8 mW/K.
2003 Jul 23
V
V
V
T
t
V
I
I
I
I
T
P
SYMBOL
SYMBOL
r
IK
OK
O
CC
, t
amb
stg
CC
I
O
CC
tot
Hex inverter
f
, I
For SSOP14 and TSSOP14 packages: above 60 C derate linearly with 5.5 mW/K.
For DHVQFN14 packages: above 60 C derate linearly with 4.5 mW/K.
GND
supply voltage
input voltage
output voltage
ambient temperature
input rise and fall times
supply voltage
input diode current
output diode current
output source or sink
current
V
storage temperature
power dissipation
CC
DIP14 package
other packages
or GND current
PARAMETER
PARAMETER
see DC and AC
characteristics per
device
V
V
V
V
V
T
T
0.5 V < V
amb
amb
CC
CC
CC
I
O
CONDITIONS
< 0.5 V or V
< 0.5 V or V
= 2.0 V
= 4.5 V
= 6.0 V
= 40 to +125 C; note 1
= 40 to +125 C; note 2
O
< V
CONDITIONS
I
CC
O
> V
> V
5
+ 0.5 V
2.0
0
0
CC
MIN.
40
CC
+ 0.5 V
+ 0.5 V
74HC04
5.0
+25
6.0
TYP.
6.0
V
V
+125
1000
500
400
MAX.
CC
CC
4.5
0
0
MIN.
40
0.5
65
74HC04; 74HCT04
MIN.
74HCT04
5.0
+25
6.0
TYP.
+7.0
+150
750
500
Product specification
20
20
25
50
MAX.
5.5
V
V
+125
500
MAX.
CC
CC
V
mA
mA
mA
mA
mW
mW
C
UNIT
V
V
V
ns
ns
ns
UNIT
C