am28f010-120pi Advanced Micro Devices, am28f010-120pi Datasheet - Page 8

• Manufacturer Part Number: am28f010-120pi
• Description: 1 Megabit 128 K X 8-bit Cmos 12.0 Volt, Bulk Erase Flash Memory
• Manufacturer: Advanced Micro Devices

V
voltages). When V
disabled, all inter nal program/erase circuits are
disabled, and the device resets to the read mode. The
device ignores all writes until V
must ensure that the control pins are in the correct logic
state when V
Write Pulse “Glitch” Protection
Noise pulses of less than 10 ns (typical) on OE#, CE#
or WE# will not initiate a write cycle.
FUNCTIONAL DESCRIPTION
Description of User Modes
Legend:
X = Don’t care, where Don’t Care is either V
Notes:
1. V
2. Manufacturer and device codes may also be accessed via a command register write sequence. Refer to Table 2.
3. 11.5 < V
4. Read operation with V
5. With V
6. Refer to Table 3 for valid D
7. All inputs are Don’t Care unless otherwise stated, where Don’t Care is either V
8. If V
8
Operation
Read-Only
Read/Write
CC
of V
the device. Refer to the DC characteristics. When V
addresses except A9 and A0 must be held at V
rise time and fall time specification of 500 ns minimum.
PPL
< V
CC
PPH
may be grounded, connected with a resistor to ground, or < V
PP
LKO
. 0 V < An < V
1.0 Volt, the voltage difference between V
ID
at high voltage, the standby current is I
CC
< 13.0 V. Minimum V
Read
Standby
Output Disable
Auto-Select Manufacturer
Code (Note 2)
Auto-Select Device Code
(Note 2)
Read
Standby (Note 5)
Output Disable
Write
(see DC Characteristics section for
> V
CC
LKO
< V
CC
PP
to prevent uninitentional writes.
LKO
+ 2 V, (normal TTL or CMOS input levels, where n = 0 or 9).
= V
IN
, the command register is
PPH
during a write operation.
ID
CC
may access array data or the Auto select codes.
Table 1. Am28F010 Device Bus Operations
rise time and fall time (between 0 and V
> V
IL
LKO
or V
. The user
CE
IH
IL
#
V
V
V
V
V
V
V
V
V
CC
.
levels. V
IH
IH
PP
IL
IL
IL
IL
IL
IL
IL
(E
PP
+ I
#
and V
Am28F010
)
PP
= V
OE
PPL
(standby).
PPL
CC
#
V
V
V
V
V
V
V
= V
X
X
, memory contents can be read but not written or erased.
should not exceed 10.0 volts. Also, the Am28F010 has a V
IH
IH
IH
IL
IL
IL
IL
(G
Logical Inhibit
Writing is inhibited by holding any one of OE# = V
= V
WE# must be a logical zero while OE# is a logical one.
Power-Up Write Inhibit
Power-up of the device with WE# = CE# = V
OE# = V
edge of WE#. The internal state machine is automat-
ically reset to the read mode on power-up.
PP
#
CC
) WE
IH
+ 2.0 V. V
or WE# = V
V
CC
#
V
V
V
V
V
V
IH
X
X
X
ID
IH
IH
IH
IH
IH
IL
+ 2 V. See DC Characteristics for voltage levels
(W
voltages) is 500 ns.
will not accept commands on the rising
#
IL
PPH
)
or V
(Note 1)
is the programming voltage specified for
IH
V
V
V
V
V
V
V
V
V
V
IH
PPH
PPH
PPH
PPH
PPL
PPL
PPL
PPL
PPL
. To initiate a write cycle CE# and
PP
levels. In the Auto select mode all
V
A0
A0
V
A0
A0
X
X
X
X
IH
IL
(Note 3)
(Note 3)
V
V
A9
A9
A9
A9
X
X
X
X
ID
ID
(Note 4)
(Note 6)
HIGH Z
HIGH Z
HIGH Z
HIGH Z
CODE
CODE
(A7h)
D
(01h)
D
IL
IL
D
I/O
OUT
OUT
, CE#
IN
and
PP