2sd2639 Sanyo Semiconductor Corporation, 2sd2639 Datasheet
2sd2639
Manufacturer Part Number
2sd2639
Description
2sb1683 Pnp Epitaxial Planar Silicon Transistor 2sd2639 Npn Triple Diffused Planar Silicon Transistor
Manufacturer
Sanyo Semiconductor Corporation
Datasheet
1.2SD2639.pdf
(4 pages)
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
2SD2639
Manufacturer:
IR
Quantity:
20 000
Ordering number : ENN6960
Features
Specifications
( ) : 2SB1683
Absolute Maximum Ratings at Ta=25 C
Electrical Characteristics at Ta=25 C
Collector-to-Base Voltage
Collector-to-Emitter Voltage
Emitter-to-Base Voltage
Collector Current
Collector Current (Pulse)
Collector Dissipation
Junction Temperature
Storage Temperature
Collector Cutoff Current
Emitter Cutoff Current
•
•
Wide ASO because of on-chip ballast resistance.
Good dependence of f T on current and good HF
characteristic.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
Parameter
Parameter
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
SANYO Electric Co.,Ltd. Semiconductor Company
Symbol
Symbol
V CBO
V CEO
V EBO
I CBO
I EBO
Tstg
I CP
P C
I C
Tj
140V / 12A, AF 60W Output Applications
2SB1683 / 2SD2639
V CB =(--)80V, I E =0
V EB =(--)4V, I C =0
Tc=25 C
2SD2639 : NPN Triple Diffused Planar Silicon Transistor
Conditions
Package Dimensions
unit : mm
2010C
Conditions
2SB1683 : PNP Epitaxial Planar Silicon Transistor
3.6
2.55
1 2 3
2SB1683 / 2SD2639
10.2
[2SB1683 / 2SD2639]
5.1
1.2
0.8
2.55
62501 TS IM TA-3139, 3140
min
4.5
Ratings
0.4
typ
Ratings
1.3
1 : Base
2 : Collector
3 : Emitter
SANYO : TO-220
Continued on next page.
--40 to +150
(--)160
(--)140
max
(--)0.1
(--)0.1
(--)12
(--)15
(--)6
150
80
No.6960-1/4
Unit
Unit
mA
mA
W
V
V
V
A
A
C
C
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2sd2639 Summary of contents
Page 1
... SANYO products described or contained herein. SANYO Electric Co.,Ltd. Semiconductor Company TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 2SB1683 / 2SD2639 2SB1683 : PNP Epitaxial Planar Silicon Transistor 2SD2639 : NPN Triple Diffused Planar Silicon Transistor 140V / 12A, AF 60W Output Applications Package Dimensions unit : mm 2010C 3.6 ...
Page 2
... Collector-to-Emitter Saturation Voltage Collector-to-Base Breakdown Voltage Collector-to-Emitter Breakdown Voltage Emitter-to-Base Breakdown Voltage Turn-ON Time Fall Time Storage Time * : The 2SB1683 / 2SD2639 are classified follows : Rank 120 100 to 200 Switching Time Test Circuit ...
Page 3
... Collector-to-Base Voltage (sat 1 0 --0.1 --1.0 Collector Current 2SB1683 / 2SD2639 5 2SB1683 -- 1 --10 0.1 IT03156 1000 2SB1683 -- 100 ...
Page 4
... IT03164 120 100 100 IT03166 V BE (sat 2SD2639 = 1.0 Collector Current 2SB1683 / 2SD2639 100 120 140 Case Temperature No.6960-4 IT03165 160 IT03168 ...