2sd2639 Sanyo Semiconductor Corporation, 2sd2639 Datasheet - Page 2

• Manufacturer Part Number: 2sd2639
• Description: 2sb1683 Pnp Epitaxial Planar Silicon Transistor 2sd2639 Npn Triple Diffused Planar Silicon Transistor
• Manufacturer: Sanyo Semiconductor Corporation

Continued from preceding page.
* : The 2SB1683 / 2SD2639 are classified by 1A h FE as follows :
Switching Time Test Circuit
DC Current Gain
Gain-Bandwidth Product
Output Capacitance
Base-to-Emitter Saturation Voltage
Collector-to-Emitter Saturation Voltage
Collector-to-Base Breakdown Voltage
Collector-to-Emitter Breakdown Voltage
Emitter-to-Base Breakdown Voltage
Turn-ON Time
Fall Time
Storage Time
--10
--8
--6
--4
--2
--7
--6
--5
--4
--3
--2
--1
Rank
0
0
h FE
0
0
PW=20 s
D.C. 1%
--0.2
Parameter
60 to 120
Collector-to-Emitter Voltage, V CE -- V
Input
Base-to-Emitter Voltage, V BE -- V
D
51
--0.4
--10
--0.6
100 to 200
200
V BE =--2V
(For PNP, the polarity is reversed)
I C -- V CE
I C -- V BE
V R
E
I B1
--0.8
--20
I B2
1 F
R B
1
+
--1.0
10I B1 = --10I B2 =I C =1A
V (BR)CBO
V (BR)CEO
V (BR)EBO
V CE (sat)
Symbol
h FE 1
h FE 2
V BE
Cob
t stg
t on
--1.2
f T
--30
t f
1 F
+
2SB1683
V CE = --5V
2SB1683
--1.4
I B =0
2SB1683 / 2SD2639
V CE =(--)5V, I C =(--)1A
V CE =(--)5V, I C =(--)6A
V CE =(--)5V, I C =(--)1A
V CB =(--)10V, f=1MHz
V CE =(--)5V, I C =(--)1A
I C =(--)5A, I B =(--)0.5A
I C =(--)5mA, I E =0
I C =(--)5mA, R BE =
I C =(--)50mA, R BE =
I E =(--)5mA, I C =0
See specified test circuit.
See specified test circuit.
See specified test circuit.
R L
20
IT03152
IT03154
--1.6
Output
V CC =20V
--40
Conditions
10
8
6
4
2
0
7
6
5
4
3
2
1
0
0
0
0.2
Collector-to-Emitter Voltage, V CE -- V
Base-to-Emitter Voltage, V BE -- V
0.4
10
0.6
(--)160
(--)140
(--)140
min
I C -- V CE
I C -- V BE
(--)6
60*
20
0.8
20
(0.25)0.26
(0.53)0.68
(1.61)6.88
(300)210
(1.1)0.6
Ratings
typ
1.0
15
1.2
30
max
200*
1.5
2.5
2SD2639
2SD2639
V CE =5V
1.4
No.6960-2/4
IT03153
IT03155
Unit
MHz
pF
V
V
V
V
V
V
s
s
s
1.6
40