blf6g24-12 NXP Semiconductors, blf6g24-12 Datasheet
blf6g24-12
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blf6g24-12 Summary of contents
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... BLF6G24-12 Power LDMOS transistor Rev. 1 — 24 February 2011 1. Product profile 1.1 General description 12 W LDMOS power transistor for various applications such as ISM and industrial heating at frequencies from 2400 MHz to 2500 MHz. Table 1. RF performance at T Mode of operation CW CAUTION This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken during transport and handling ...
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... Conditions drain-source voltage gate-source voltage storage temperature junction temperature Thermal characteristics Parameter thermal resistance from junction to case All information provided in this document is subject to legal disclaimers. Rev. 1 — 24 February 2011 BLF6G24-12 Power LDMOS transistor Simplified outline Graphic symbol 1 [1] 2 Min - −0.5 −65 ...
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... Symbol η D 7.1 Ruggedness in class-AB operation The BLF6G24-12 is capable of withstanding a load mismatch corresponding to VSWR = through all phases under the following conditions mA BLF6G24-12 Objective data sheet Characteristics C per section; unless otherwise specified. ...
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... REFERENCES JEDEC JEITA All information provided in this document is subject to legal disclaimers. Rev. 1 — 24 February 2011 BLF6G24-12 Power LDMOS transistor 6.43 6.43 0.51 6.27 6.27 0.253 0.253 0.02 0.247 ...
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... Table 8. Acronym CW ISM LDMOS RF VSWR 10. Revision history Table 9. Revision history Document ID Release date BLF6G24-12 v.1 20110224 BLF6G24-12 Objective data sheet Abbreviations Description Continuous Wave Industrial, Scientific and Medical Laterally Diffused Metal-Oxide Semiconductor Radio Frequency Voltage Standing-Wave Ratio Data sheet status Objective data sheet All information provided in this document is subject to legal disclaimers. Rev. 1 — ...
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... Export control — This document as well as the item(s) described herein may be subject to export control regulations. Export might require a prior authorization from national authorities. All information provided in this document is subject to legal disclaimers. Rev. 1 — 24 February 2011 BLF6G24-12 Power LDMOS transistor © NXP B.V. 2011. All rights reserved ...
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... Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. http://www.nxp.com salesaddresses@nxp.com All information provided in this document is subject to legal disclaimers. Rev. 1 — 24 February 2011 BLF6G24-12 Power LDMOS transistor © NXP B.V. 2011. All rights reserved ...
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... Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2011. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com All rights reserved. Date of release: 24 February 2011 Document identifier: BLF6G24-12 ...