ixfn180n06 IXYS Corporation, ixfn180n06 Datasheet - Page 3

• Manufacturer Part Number: ixfn180n06
• Description: Hiperfettm Power Mosfets N-channel Enhancement Mode Avalanche Rated, High Dv/dt, Low Trr
• Manufacturer: IXYS Corporation

© 2000 IXYS All rights reserved
Figure 5. R
Figure 1. Output Characteristics at 25
Figure 3. Admittance Curves
600
500
400
300
200
100
175
150
125
100
75
50
25
0
1.4
1.3
1.2
1.1
1.0
0.9
0.8
0
2
0.0
0
T
J
V
T
DS(on)
= 25
DS
J
= 25
100
> 4R
4
O
C
T
o
0.5
normalized to 0.5 I
J
C
=25
DS(ON)
V
GS
O
200
C
V
= 10V
6
I
V
D
GS
DS
- Amperes
- Volts
1.0
- Volts
300
8
T
V
J
=100
GS
400
= 15V
O
1.5
D25
C
10
T
value
V
O
500
J
=150
GS
C
=10V
9V
8V
7V
6V
5V
O
C
12
2.0
600
IXFN 200N06 IXFN 180N07 IXFN 200N07
Figure 6. Normalized R
Temperature
Figure 4. Transconductance vs.
600
500
400
300
200
100
2.25
2.00
1.75
1.50
1.25
1.00
0.75
0.50
Figure 2. Extended Output Characteristics
0
80
70
60
50
40
30
20
10
0
0
-50 -25
0
T
1
J
=25
V
Drain Current
GS
100
I
V
D
O
2
GS
=10V
C
= 75A
= 10V
0
3
200
25
T
V
4
I
J
C
DS
DS(on)
- Degrees C
- Amperes
50
- Volts
5
300
vs. Junction
T
T
75 100 125 150 175
J
T
J
6
= 150
J
= 100
= 25
400
7
o
o
o
C
C
C
V
GS
8
=10V
9V
8V
7V
6V
500
5V
9
10
3 - 4
600