ixfn180n06 IXYS Corporation, ixfn180n06 Datasheet - Page 4

• Manufacturer Part Number: ixfn180n06
• Description: Hiperfettm Power Mosfets N-channel Enhancement Mode Avalanche Rated, High Dv/dt, Low Trr
• Manufacturer: IXYS Corporation

© 2000 IXYS All rights reserved
12000
10000
8000
6000
4000
2000
16
14
12
10
0
8
6
4
2
0
Figure 7. Gate Charge
0
0
10
10
10
Figure 9. Capacitance Curves
0
-1
-2
10
Figure 11. Transient Thermal Resistance
100
-3
V
DS
I
I
D
G
Gate Charge - nCoulombs
= 40V
= 38A
= 1mA
10
200
V
300
DS
- Volts
20
400
Ciss
Coss
Crss
500
30
F = 1MHz
600
10
700
40
-2
IXFN 200N06 IXFN 180N07 IXFN 200N07
Time - Seconds
Figure 10. Source-Drain Voltage vs. Source Current
Figure 8. Drain Current vs. Case
Temperature
400
300
200
100
250
200
150
100
50
0
0
0.0
-50
T
J
(Terminal current limit)
=150
-25
IXFN200
O
IXFN180
C
T
10
0.5
Case Temperature -
J
0
=150
-1
O
25
C
V
SD
- Volts
1.0
50
T
J
=100
T
75
J
=25
O
C
O
100 125 150
C
1.5
O
C
2.0
4 - 4
10
0