huf75925p3 Fairchild Semiconductor, huf75925p3 Datasheet - Page 4

• Manufacturer Part Number: huf75925p3
• Description: 11a, 200v, 0.275 Ohm, N-channel, Ultrafet Power Mosfets
• Manufacturer: Fairchild Semiconductor

Typical Performance Curves
©2001 Fairchild Semiconductor Corporation
FIGURE 9. NORMALIZED DRAIN TO SOURCE ON
100
0.1
20
15
10
10
FIGURE 5. FORWARD BIAS SAFE OPERATING AREA
5
0
1
1
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
2
PULSE DURATION = 80 s
DUTY CYCLE = 0.5% MAX
V
FIGURE 7. TRANSFER CHARACTERISTICS
-80
DD
PULSE DURATION = 80 s
DUTY CYCLE = 0.5% MAX
OPERATION IN THIS
AREA MAY BE
LIMITED BY r
= 15V
RESISTANCE vs JUNCTION TEMPERATURE
-40
V
DS
V
GS
T
, DRAIN TO SOURCE VOLTAGE (V)
J
, GATE TO SOURCE VOLTAGE (V)
, JUNCTION TEMPERATURE (
DS(ON)
0
3
10
40
T
T
T
SINGLE PULSE
J
J
C
= 175
= MAX RATED
= 25
80
o
o
C
C
V
GS
4
(Continued)
120
100
= 10V, I
o
T
C)
J
= 25
T
D
160
J
= 11A
100 s
10ms
1ms
= -55
o
C
o
500
200
C
5
NOTE: Refer to Fairchild Application Notes AN9321 and AN9322.
FIGURE 10. NORMALIZED GATE THRESHOLD VOLTAGE vs
FIGURE 6. UNCLAMPED INDUCTIVE SWITCHING
100
20
15
10
10
0.001
5
0
1
1.2
1.0
0.8
0.6
0
-80
FIGURE 8. SATURATION CHARACTERISTICS
STARTING T
If R = 0
t
If R
t
AV
AV
CAPABILITY
JUNCTION TEMPERATURE
= (L)(I
= (L/R)ln[(I
-40
0
V
1
DS
0.01
T
J
t
AS
J
AV
, DRAIN TO SOURCE VOLTAGE (V)
, JUNCTION TEMPERATURE (
= 150
)/(1.3*RATED BV
, TIME IN AVALANCHE (ms)
V
0
V
GS
AS
GS
o
*R)/(1.3*RATED BV
C
= 10V
= 5V
2
40
0.1
HUF75925P3, HUF75925D3ST Rev. B
PULSE DURATION = 80 s
DUTY CYCLE = 0.5% MAX
T
DSS
C
80
= 25
3
V
STARTING T
GS
- V
o
DSS
DD
= V
C
120
)
DS
1
V
- V
o
GS
C)
, I
DD
4
D
J
= 4.5V
160
) +1]
= 250 A
= 25
o
C
200
10
5