huf75925p3 Fairchild Semiconductor, huf75925p3 Datasheet - Page 7
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huf75925p3
Manufacturer Part Number
huf75925p3
Description
11a, 200v, 0.275 Ohm, N-channel, Ultrafet Power Mosfets
Manufacturer
Fairchild Semiconductor
Datasheet
1.HUF75925P3.pdf
(10 pages)
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
HUF75925P3
Manufacturer:
FAIRCHILD
Quantity:
12 500
PSPICE Electrical Model
.SUBCKT HUF75925 2 1 3 ;
CA 12 8 1.6e-9
CB 15 14 1.75e-9
CIN 6 8 9.3e-8
DBODY 7 5 DBODYMOD
DBREAK 5 11 DBREAKMOD
DPLCAP 10 5 DPLCAPMOD
EBREAK 11 7 17 18 227
EDS 14 8 5 8 1
EGS 13 8 6 8 1
ESG 6 10 6 8 1
EVTHRES 6 21 19 8 1
EVTEMP 20 6 18 22 1
IT 8 17 1
LDRAIN 2 5 1e-9
LGATE 1 9 5.12e-9
LSOURCE 3 7 4.24e-9
MMED 16 6 8 8 MMEDMOD
MSTRO 16 6 8 8 MSTROMOD
MWEAK 16 21 8 8 MWEAKMOD
RBREAK 17 18 RBREAKMOD 1
RDRAIN 50 16 RDRAINMOD 1.98e-1
RGATE 9 20 1.61
RLDRAIN 2 5 10
RLGATE 1 9 51.2
RLSOURCE 3 7 42.4
RSLC1 5 51 RSLCMOD 1e-6
RSLC2 5 50 1e3
RSOURCE 8 7 RSOURCEMOD 1e-2
RVTHRES 22 8 RVTHRESMOD 1
RVTEMP 18 19 RVTEMPMOD 1
S1A 6 12 13 8 S1AMOD
S1B 13 12 13 8 S1BMOD
S2A 6 15 14 13 S2AMOD
S2B 13 15 14 13 S2BMOD
VBAT 22 19 DC 1
ESLC 51 50 VALUE={(V(5,51)/ABS(V(5,51)))*(PWR(V(5,51)/(1e-6*19),2.5))}
.MODEL DBODYMOD D (IS = 1e-12 N=1.02 RS = 7.75e-3 TRS1 = 2.5e-3 TRS2 = 2e-5 CJO = 8.5e-10 TT = 9.6e-6 M = 0.61 XTI=5.5)
.MODEL DBREAKMOD D (RS = 4. 2TRS1 = 1e- 3TRS2 = -8.9e-6)
.MODEL DPLCAPMOD D (CJO = 1.15e- 9IS = 1e-30 N = 10 M = 0.86)
.MODEL MMEDMOD NMOS (VTO = 3.25 KP = 5 IS = 1e-30 N = 10 TOX = 1 L = 1u W = 1u RG = 1.61)
.MODEL MSTROMOD NMOS (VTO = 3.65 KP = 28 IS = 1e-30 N = 10 TOX = 1 L = 1u W = 1u)
.MODEL MWEAKMOD NMOS (VTO = 2.8 KP = 0.05 IS = 1e-30 N = 10 TOX = 1 L = 1u W = 1u RG = 16.1 RS=.1)
.MODEL RBREAKMOD RES (TC1 =1.3e- 3TC2 = 2e-6)
.MODEL RDRAINMOD RES (TC1 = 1e-2 TC2 = 3.7e-5)
.MODEL RSLCMOD RES (TC1 = 4e-3 TC2 = 1e-6)
.MODEL RSOURCEMOD RES (TC1 = 1e-3 TC2 = 1e-6)
.MODEL RVTHRESMOD RES (TC1 = -2e-3 TC2 = -1.3e-5)
.MODEL RVTEMPMOD RES (TC1 = -3e- 3TC2 = 1.9e-6)
.MODEL S1AMOD VSWITCH (RON = 1e-5 ROFF = 0.1 VON = -7.5 VOFF= -.5)
.MODEL S1BMOD VSWITCH (RON = 1e-5 ROFF = 0.1 VON = -.5 VOFF= -7.5)
.MODEL S2AMOD VSWITCH (RON = 1e-5 ROFF = 0.1 VON = -0.1 VOFF= 0.2)
.MODEL S2BMOD VSWITCH (RON = 1e-5 ROFF = 0.1 VON = 0.2 VOFF= -0.1)
.ENDS
NOTE: For further discussion of the PSPICE model, consult A New PSPICE Sub-Circuit for the Power MOSFET Featuring Global
Temperature Options; IEEE Power Electronics Specialist Conference Records, 1991, written by William J. Hepp and C. Frank Wheatley.
©2001 Fairchild Semiconductor Corporation
GATE
1
rev 19 October 2000
RLGATE
LGATE
9
RGATE
CA
12
20
+
EVTEMP
S1A
S1B
ESG
18
22
EGS
13
8
+
-
-
13
6
8
10
+
+
-
-
14
13
6
8
6
RSLC2
S2A
S2B
DPLCAP
EVTHRES
+
EDS
19
8
15
CB
CIN
-
+
-
5
8
51
5
5
MSTRO
+
-
14
51
21
RDRAIN
RSLC1
50
ESLC
16
8
MMED
8
EBREAK
IT
DBREAK
RSOURCE
17
MWEAK
RVTHRES
RBREAK
11
+
-
17
18
7
HUF75925P3, HUF75925D3ST Rev. B
+
-
18
22
RVTEMP
19
RLSOURCE
DBODY
LSOURCE
VBAT
RLDRAIN
LDRAIN
SOURCE
DRAIN
2
3