huf76009d3s Intersil Corporation, huf76009d3s Datasheet

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huf76009d3s

Manufacturer Part Number
huf76009d3s
Description
20a, 20v, 0.027 Ohm, N-channel, Logic Level Power Mosfets
Manufacturer
Intersil Corporation
Datasheet
20A, 20V, 0.027 Ohm, N-Channel, Logic
Level Power MOSFETs
THE HUF76009 is an application-specific MOSFET
optimized for switching when used as the upper switch in
synchronous buck applications. The low gate charge and low
input capacitance results in lower driver and lower switching
losses thereby increasing the overall system efficiency.
Symbol
Packaging
Absolute Maximum Ratings
NOTE:
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
THERMAL SPECIFICATIONS
1. T
GATE
SOURCE
J
JEDEC TODD2AA
= 25
SYMBOL
T
HUF76009D3S
J
V
V
R
R
V
, T
T
I
DGR
P
DSS
DM
T
I
I
pkg
o
GS
D
D
D
L
JC
JA
C to 125
STG
DRAIN (FLANGE)
o
C.
G
Drain to Source Voltage (Note 1)
Drain to Gate Voltage (R
Gate to Source Voltage
Drain Current
Power Dissipation
Operating and Storage Temperature
Maximum Temperature for Soldering
Thermal Resistance Junction to Case, TO-220, TO-252
Thermal Resistance Junction to Ambient TO-220
Thermal Resistance Junction to Ambient TO-252
Continuous (T
Continuous (T
Pulsed Drain Current
Derate Above 25
Leads at 0.063in (1.6mm) from Case for 10s
Package Body for 10s, See Techbrief TB334
TM
D
1
S
T
1-888-INTERSIL or 321-724-7143
Data Sheet
JEDEC TO-220AB
C
C
C
HUFD76009P3
= 25
= 25
= 100
o
C
o
C, Unless Otherwise Specified
o
(FLANGE)
C, V
o
GS
DRAIN
C, V
SOURCE
= 20k ) (Note 1)
GS
GS
PARAMETER
= 10V) (Figure 2)
DRAIN
= 5V)
GATE
CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.
|
Intersil and Design is a trademark of Intersil Corporation.
Features
• 20A, 20V
• PWM optimized for synchronous buck applications
• Fast Switching
• Low Gate Charge
• Low Capacitance
Ordering Information
NOTE: When ordering, use the entire part number. Add the suffix T to
obtain the HUF76009D3S in tape and reel, e.g., HUF76009D3ST.
HUF76009P3
HUF76009D3S
- r
- r
- Q
- C
- C
PART NUMBER
HUF76009P3, HUF76009D3S
DS(ON)
DS(ON)
ISS
RSS
g
Total 11nC (Typ)
470pF (Typ)
50pF (Typ)
= 0.027
= 0.039
April 2000
UltraFET® is a registered trademark of Intersil Corporation.
TO-220AB
TO-252AA
V
V
PACKAGE
GS
GS
HUF76009D3S
HUF76009P3,
-55 to 150
Figure 4
10V
5V
0.33
3.04
300
260
100
20
20
20
16
41
62
|
File Number
16
Copyright
76009P
76009D
©
Intersil Corporation 2000
BRAND
UNITS
W/
o
o
o
4861.1
C/W
C/W
C/W
o
o
o
W
V
V
V
A
A
A
C
C
C
o
C

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huf76009d3s Summary of contents

Page 1

... HUFD76009P3 Ordering Information SOURCE DRAIN PART NUMBER GATE HUF76009P3 HUF76009D3S NOTE: When ordering, use the entire part number. Add the suffix T to DRAIN obtain the HUF76009D3S in tape and reel, e.g., HUF76009D3ST. (FLANGE Unless Otherwise Specified PARAMETER = 20k ) (Note ...

Page 2

... Gate to Drain “Miller” Charge CAPACITANCE SPECIFICATIONS Input Capacitance Output Capacitance Reverse Transfer Capacitance Source to Drain Diode Specifications PARAMETER Source to Drain Diode Voltage Reverse Recovery Time Reverse Recovered Charge 2 HUF76009P3, HUF76009D3S o C, Unless Otherwise Specified SYMBOL TEST CONDITIONS 250 (Figure 11) DSS D ...

Page 3

... FIGURE 3. NORMALIZED MAXIMUM TRANSIENT THERMAL IMPEDANCE 500 V = 10V 100 GS V TRANSCONDUCTANCE MAY LIMIT CURRENT IN THIS REGION HUF76009P3, HUF76009D3S 100 125 150 o C) FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT RECTANGULAR PULSE DURATION ( ...

Page 4

... V , DRAIN TO SOURCE VOLTAGE (V) DS FIGURE 7. SATURATION CHARACTERISTICS 1.6 PULSE DURATION = 80 s DUTY CYCLE = 0.5% MAX 1.4 1.2 1.0 0.8 0.6 -80 - JUNCTION TEMPERATURE ( J FIGURE 9. NORMALIZED DRAIN TO SOURCE ON RESISTANCE vs JUNCTION TEMPERATURE 4 HUF76009P3, HUF76009D3S (Continued 100 s 20 1ms 10 10ms 4. ...

Page 5

... DESCENDING ORDER GATE CHARGE (nC) g NOTE: Refer to Intersil Application Notes AN7254 and AN7260. FIGURE 13. GATE CHARGE WAVEFORMS FOR CONSTANT GATE CURRENT 5 HUF76009P3, HUF76009D3S (Continued) 2000 1000 100 50 80 120 160 o C) FIGURE 12. CAPACITANCE vs DRAIN TO SOURCE VOLTAGE 150 125 ...

Page 6

... Test Circuits and Waveforms g(REF) FIGURE 16. GATE CHARGE TEST CIRCUIT FIGURE 18. SWITCHING TIME TEST CIRCUIT 6 HUF76009P3, HUF76009D3S DUT g(REF DUT g(TOT g(TOT ...

Page 7

... S2BMOD VSWITCH (RON = 1e-5 ROFF = 0.1 VON = 0.3 VOFF= -1.0) .ENDS NOTE: For further discussion of the PSPICE model, consult A New PSPICE Sub-Circuit for the Power MOSFET Featuring Global Temperature Options; IEEE Power Electronics Specialist Conference Records, 1991, written by William J. Hepp and C. Frank Wheatley. 7 HUF76009P3, HUF76009D3S DPLCAP 10 RSLC2 - ...

Page 8

... HUF76009P3, HUF76009D3S DPLCAP 10 RSLC2 - 6 ESG 8 EVTHRES + + ...

Page 9

... HUF76009P3, HUF76009D3S RTHERM1 RTHERM2 RTHERM3 RTHERM4 RTHERM5 RTHERM6 JUNCTION th CTHERM1 6 CTHERM2 5 CTHERM3 4 CTHERM4 3 ...

Page 10

... TERM 0.070 (1.8) BACK VIEW 0.063 (1.6) TYP 0.090 (2.3) TYP MINIMUM PAD SIZE RECOMMENDED FOR SURFACE-MOUNTED APPLICATIONS TO-252AA 16mm TAPE AND REEL 10 HUF76009P3, HUF76009D3S A A SYMBOL 1 A SEATING PLANE ...

Page 11

... No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries. For information regarding Intersil Corporation and its products, see web site www.intersil.com Sales Office Headquarters NORTH AMERICA Intersil Corporation P. O. Box 883, Mail Stop 53-204 Melbourne, FL 32902 TEL: (321) 724-7000 FAX: (321) 724-7240 11 HUF76009P3, HUF76009D3S A SYMBOL TERM ...

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