njg1125pb5 New Japan Radio Co.,Ltd, njg1125pb5 Datasheet
njg1125pb5
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njg1125pb5 Summary of contents
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... W-CDMA Triple LNA GaAs MMIC GENERAL DESCRIPTION NJG1125PB5 is a Triple band LNA IC designed for W-CDMA /UMTS cellular phone of 2.1GHz, 1.7GHz and 800MHz band. This IC has a LNA pass-through function to select high gain mode or low gain mode. An ultra small and ultra thin package of FFP16–B5 is adopted. ...
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... NJG1125PB5 ABSOLUTE MAXIMUM RATINGS PARAMETER Operating voltage Inverter supply voltage Control voltage Input power Power dissipation Operating temperature Storage temperature ELECTRICAL CHARACTERISTICS 1 (DC) PARAMETERS Operating voltage Inverter supply voltage Control voltage1 (High) Control voltage1 (Low) Control voltage 2 (High) Control voltage 2 (Low) ...
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... Pin=-30dBm =V =2.7V, V 1=0V INV CTL T =+25° =50ohm CONDITIONS Exclude PCB & connector losses (IN: 0.09dB, OUT: 0.36dB) Exclude PCB & connector losses (IN: 0.09dB) f1=fRF, f2=fRF+100kHz, Pin=-16dBm NJG1125PB5 2=0V, V 3=1.85V, fRF=2140MHz, CTL MIN TYP MAX 15.0 17.0 19.3 - 1.75 2.00 -16.0 -12.5 - -6.0 0 1.7 2 ...
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... NJG1125PB5 ELECTRICAL CHARACTERISTICS 4 (800MHz Band High Gain Mode) GENERAL CONDITIONS: V PARAMETERS SYMBOL Small signal gain3 Gain3 Noise figure3 NF3 Pin at 1dB gain P-1dB(IN)3 compression point3 Input 3rd order IIP3_3 intercept point3 RF Input VSWR3 VSWRi3 RF Output VSWR3 VSWRo3 ELECTRICAL CHARACTERISTICS 5 (800MHz Band Low Gain Mode) ...
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... Pin=-30dBm =2.7V, V 1=0V INV CTL T =+25° =50ohm CONDITIONS Exclude PCB & connector losses 6 (IN: 0.10dB, OUT: 0.31dB) Exclude PCB & connector losses (IN: 0.10dB) f1=fRF, f2=fRF+100kHz, 6 Pin=-16dBm NJG1125PB5 2=1.85V, V 3=1.85V, fRF=1860MHz, CTL CTL MIN TYP MAX 15.5 17.5 19.0 - 1.65 1.80 -16.0 -11.5 -6.0 +1.0 - 2.0 2.6 - 1.9 2.4 2=1.85V, V ...
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... NJG1125PB5 TERMINAL INFORMATION No. SYMBOL 1 GND Ground terminal. (0V) Inverter voltage supplies terminal. 2 VINV Control voltage supply terminal. The high level voltage of this terminal selects High Gain Mode. The low level voltage of this terminal selects Low 3 VCTL3 Gain Mode. Output terminal of 1.7GHz band. This terminal is also the power supply ...
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... “L”=0 ~ 0.3V, “H”=1. INV 2.1GHz Band 3 LNA Bypass OFF ON ON OFF OFF ON OFF OFF OFF ON OFF OFF +0.3 V NJG1125PB5 Operating state 800MHz Band 1.7GHz Band LNA Bypass LNA OFF ON OFF OFF OFF OFF OFF ON OFF ON OFF OFF OFF ON OFF OFF ...
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... NJG1125PB5 ELECTRICAL CHARACTERISTICS (2.1GHz Band High Gain Mode) 2.1GHz@High Gain Pout vs. Pin Pout -5 -10 -15 -20 P-1dB(IN)=-11.8dBm -25 -40 -30 -20 -10 Pin (dBm) Condition Ta=+25°C, f=2140MHz =2.7V, DD INV V 1=0V, V 2=0V, V CTL CTL 2.1GHz@High Gain NF vs. frequency 4 3 1 2.05 2.1 2.15 frequency (GHz) Condition Ta=+25°C, f=2~2 ...
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... Condition Ta=+25°C, f=2.1~2.2GHz =2.7V, DD INV V 1=0V, V 2=0V, V CTL CTL 20 19 OIP3 2.16 2.17 2.18 2.1 3=1.85V CTL NJG1125PB5 2.1GHz@High Gain OIP3,IIP3 vs. frequency IIP3 2.12 2.14 2.16 2.18 frequency (GHz) Condition Ta=+25°C, f1=2.1~2.2GHz, f2=f1+100kHz, Pin=-30dBm =2.7V, DD INV V 1=0V, V 2=0V, V 3=1.85V CTL CTL CTL ...
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... NJG1125PB5 ELECTRICAL CHARACTERISTICS (2.1GHz Band High Gain Mode) 2.1GHz@High Gain Gain Gain 2.4 2.6 2 (V) DD INV Condition Ta=+25°C, f=2140MHz, V 1=0V, V 2=0V, V CTL CTL 2.1GHz@High Gain P-1dB(IN) vs -10 P-1dB(IN) -12 -14 -16 -18 -20 -22 2.4 2.6 2 (V) INV DD Condition Ta=+25°C, ...
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... ELECTRICAL CHARACTERISTICS (2.1GHz Band High Gain Mode) 2.1GHz@High Gain 2.5 2 1.5 1 0.5 0 2.4 2.6 2 (V) INV DD Condition Ta=+25°C, RF=OFF, V 1=0V, V 2=0V, V CTL CTL INV 3.4 3.6 3.8 3=1.85V CTL NJG1125PB5 - 11 - ...
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... NJG1125PB5 ELECTRICAL CHARACTERISTICS (2.1GHz Band High Gain Mode) 2.1GHz@High Gain Gain, NF vs. Temperature 20 19 Gain -50 - Ambient Temperature ( Condition f=2140MHz =2.7V, DD INV V 1=0V, V 2=0V, V CTL CTL 2.1GHz@High Gain P-1dB(IN) vs. Temperature -6 -8 -10 -12 P-1dB(IN) -14 -16 -18 -20 -22 -50 - Ambient Temperature ( ...
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... ELECTRICAL CHARACTERISTICS (2.1GHz Band High Gain Mode) 2.1GHz@High Gain I vs. Temperature DD 4 3 1.5 1 0.5 0 -50 - Ambient Temperature ( Condition RF=OFF =2.7V DD INV V 1=0V, V 2=0V, V CTL CTL 75 100 o C) 3=1.85V CTL NJG1125PB5 - 13 - ...
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... NJG1125PB5 ELECTRICAL CHARACTERISTICS (2.1GHz Band High Gain Mode) Condition: Ta=+25°C, V S11, S22 VSWR - =2.7V, V 1=0V, V 2=0V INV CTL CTL 3=1.85V CTL S 21, S12 Zin, Zout ...
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... ELECTRICAL CHARACTERISTICS (2.1GHz Band High Gain Mode) Condition: Ta=+25° S11, S22 (f=50MHz~20GHz) 2.1GHz @High Gain k factor vs. frequency frequency(GHz) k factor (f=50MHz~20GHz) =V =2.7V, V 1=0V, V 2=0V, V INV CTL CTL 15 20 NJG1125PB5 3=1.85V CTL S21, S12 (f=50MHz~20GHz ...
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... NJG1125PB5 ELECTRICAL CHARACTERISTICS (2.1GHz Band Low Gain Mode) 2.1GHz@Low Gain Pout vs. Pin 10 0 -10 Pout -20 -30 -40 -50 P-1dB(IN)=+11.0dBm -60 -40 -30 -20 -10 Pin (dBm) Condition Ta=+25°C, f=2140MHz =2.7V, DD INV V 1=0V, V 2=0V, V CTL CTL 2.1GHz@Low Gain NF vs. frequency 2.05 2.1 2.15 frequency (GHz) Condition Ta=+25° ...
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... Condition Ta=+25°C, f=2.1~2.2GHz =2.7V, DD INV V 1=0V, V 2=0V, V CTL CTL 2.16 2.17 2.18 2.1 3=0V CTL NJG1125PB5 2.1GHz@Low Gain OIP3,IIP3 vs. frequency OIP3 IIP3 2.12 2.14 2.16 2.18 frequency (GHz) Condition Ta=+25°C, f1=2.1~2.2GHz, f2=f1+100kHz, Pin=-16dBm =2.7V, DD INV V 1=0V, V 2=0V, V 3=0V CTL CTL CTL 2 ...
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... NJG1125PB5 ELECTRICAL CHARACTERISTICS (2.1GHz Band Low Gain Mode) 2.1GHz@Low Gain Gain Gain -9 -10 2.4 2.6 2 (V) DD INV Condition Ta=+25°C, f=2140MHz, V 1=0V, V 2=0V, V CTL CTL 2.1GHz@Low Gain P-1dB(IN) vs P-1dB(IN 2.4 2.6 2 (V) DD INV Condition Ta=+25°C, ...
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... Gain IMD3 vs -60 -65 IMD3 -70 -75 -80 2.4 2.6 2 (V) DD INV Condition Ta=+25°C, f1=2140MHz, f2=f1+2140.1MHz, Pin=-16dBm, V 1=0V, V 2=0V, V CTL CTL INV 0.1 0.08 0.06 0.04 0.02 0 3.4 3.6 3.8 2.4 Condition 3=0V CTL NJG1125PB5 2.1GHz@Low Gain I vs INV I DD 2.6 2.8 3 3.2 3.4 3 (V) DD INV Ta=+25°C, RF=OFF, V 1=0V, V 2=0V, V 3=0V CTL CTL CTL 3 ...
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... NJG1125PB5 ELECTRICAL CHARACTERISTICS (2.1GHz Band Low Gain Mode) 2.1GHz@Low Gain Gain, NF vs. Temperature - Gain -9 -10 -11 -12 -50 - Ambient Temperature ( Condition f=2140MHz =2.7V, DD INV V 1=0V, V 2=0V, V CTL CTL 2.1GHz@Low Gain P-1dB(IN) vs. Temperature P-1dB(IN -50 - Ambient Temperature ( ...
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... IMD3 -75 -80 -85 -90 -50 - Ambient Temperature ( Condition f1=2140MHz, f2=f1+100kHz, Pin=-16dBm =2.7V DD INV V 1=0V, V 2=0V, V CTL CTL 0.5 0.4 0.3 0.2 0 100 - Condition 3=0V CTL NJG1125PB5 2.1GHz@Low Gain I vs. Temperature - Ambient Temperature ( C) RF=OFF =2.7V DD INV V 1=0V, V 2=0V, V 3=0V CTL CTL CTL 100 - 21 - ...
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... NJG1125PB5 ELECTRICAL CHARACTERISTICS (2.1GHz Band Low Gain Mode) Condition: Ta=+25°C, V S11, S22 VSWR - =2.7V, V 1=0V, V 2=0V INV CTL CTL 3=0V CTL S21, S12 Zin, Zout ...
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... ELECTRICAL CHARACTERISTICS (2.1GHz Band Low Gain Mode) Condition: Ta=+25° S11, S22 (f=50MHz~20GHz) 2.1GHz @Low Gain k factor vs. frequency frequency(GHz) k factor (f=50MHz~20GHz =2.7V, V 1=0V, V 2=0V, V INV CTL CTL (f=50MHz~20GHz) 20 NJG1125PB5 3=0V CTL S21, S12 - 23 - ...
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... NJG1125PB5 ELECTRICAL CHARACTERISTICS (800MHz Band High Gain Mode) 800MHz@High Gain Pout vs. Pin Pout -5 -10 -15 -20 P-1dB(IN)=-12.0dBm -25 -40 -30 -20 Pin (dBm) Condition Ta=+25°C, f=885MHz =2.7V, DD INV V 1=1.85V, V 2=0V, V CTL CTL 800MHz@High Gain NF vs. frequency 4 3 1.5 1 0.5 0 750 800 850 ...
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... V CTL CTL 16 15 OIP3 900 910 860 Condition Ta=+25°C, f1=860~910MHz, f2=f1+100kHz, Pin=-30dBm, V 3=1.85V CTL V NJG1125PB5 800MHz@High Gain OIP3,IIP3 vs. frequency IIP3 870 880 890 900 frequency (MHz =2.7V, DD INV 1=1.85V, V 2=0V, V 3=1.85V CTL CTL CTL ...
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... NJG1125PB5 ELECTRICAL CHARACTERISTICS (800MHz Band High Gain Mode) 800MHz@High Gain Gain Gain 2.4 2.6 2 (V) DD INV Condition Ta=+25°C, f=885MHz, V 1=1.85V, V 2=0V, V CTL CTL 800MHz@High Gain P-1dB(IN) vs P-1dB(IN) -8 -10 -12 -14 -16 -18 2.4 2.6 2 (V) ...
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... ELECTRICAL CHARACTERISTICS (800MHz Band High Gain Mode) 800MHz@High Gain 2.5 2 1.5 1 0.5 0 2.4 2.6 2 INV Condition Ta=+25°C, RF=OFF V 1=1.85V, V 2=0V, V CTL CTL INV 3.4 3.6 3.8 (V) 3=1.85V CTL NJG1125PB5 - 27 - ...
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... NJG1125PB5 ELECTRICAL CHARACTERISTICS (800MHz Band High Gain Mode) 800MHz@High Gain Gain, NF vs. Temperature 18 17 Gain -50 - Ambient Temperature ( Condition f=885MHz =2.7V, DD INV V 1=1.85V, V 2=0V, V CTL CTL 800MHz@High Gain P-1dB(IN) vs. Temperature -6 -8 -10 P-1dB(IN) -12 -14 -16 -18 -20 -22 -50 -25 ...
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... ELECTRICAL CHARACTERISTICS (800MHz Band High Gain Mode) 800MHz@High Gain I vs. Temperature 2.5 2 1.5 1 0.5 0 -50 - Ambient Temperature ( Condition RF=OFF =2.7V, DD INV V 1=1.85V, V 2=0V, V CTL CTL 50 75 100 o C) 3=1.85V CTL NJG1125PB5 - 29 - ...
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... NJG1125PB5 ELECTRICAL CHARACTERISTICS (800MHz Band Low Gain Mode) Condition: Ta=+25°C, V S11, S22 VSWR - =2.7V, V 1=1.85V INV CTL CTL 2=0V, V 3=1.85V CTL S21, S12 Zin, Zout ...
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... ELECTRICAL CHARACTERISTICS (800MHz Band Low Gain Mode) Condition: Ta=+25° S11, S22 (f=50MHz~20GHz) 800MHz @High Gain k factor vs. frequency frequency(GHz) k factor (f=50MHz~20GHz =2.7V, V 1=1.85V, V INV CTL CTL 20 NJG1125PB5 2=0V, V 3=1.85V CTL S21, S12 (f=50MHz~20GHz ...
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... NJG1125PB5 ELECTRICAL CHARACTERISTICS (800MHz Band Low Gain Mode) 800MHz@Low Gain Pout vs. Pin 10 0 -10 Pout -20 -30 -40 P-1dB(IN)=+9.0dBm -50 -40 -30 -20 -10 Pin (dBm) Condition Ta=+25°C, f=885MHz =2.7V, DD INV V 1=1.85V, V 2=0V, V CTL CTL 800MHz@Low Gain NF vs. frequency 750 800 ...
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... INV V 1=1.85V, V 2=0V, V CTL CTL 8 OIP3 900 910 860 Condition Ta=+25°C, f1=860~910MHz, f2=f1+100kHz, Pin=-20dBm, 3=0V V CTL V NJG1125PB5 800MHz@Low Gain OIP3,IIP3 vs. frequency IIP3 870 880 890 900 frequency (MHz =2.7V, DD INV 1=1.85V, V 2=0V, V 3=0V CTL CTL CTL ...
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... NJG1125PB5 ELECTRICAL CHARACTERISTICS (800MHz Band Low Gain Mode) 800MHz@Low Gain Gain Gain -7 -8 2.4 2.6 2 (V) DD INV Condition Ta=+25°C, f=885MHz, V 1=1.85V, V 2=0V, V CTL CTL 800MHz@Low Gain P-1dB(IN) vs P-1dB(IN 2.4 2.6 2 (V) DD INV Condition Ta=+25° ...
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... IMD3 vs -60 -65 IMD3 -70 -75 -80 2.4 2.6 2 (V) DD INV Condition Ta=+25°C, f1=885MHz, f2=f1+100kHz, Pin=-20dBm, V 1=1.85V, V 2=0V, V CTL CTL INV 0.05 0.04 0.03 0.02 0.01 0 3.4 3.6 3.8 2.4 Condition Ta=+25°C, RF=OFF V CTL 3=0V CTL NJG1125PB5 800MHz@Low Gain I vs INV I DD 2.6 2.8 3 3.2 3.4 3 (V) DD INV 1=1.85V, V 2=0V, V 3=0V CTL CTL 3 ...
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... NJG1125PB5 ELECTRICAL CHARACTERISTICS (800MHz Band Low Gain Mode) 800MHz@Low Gain Gain, NF vs. Temperature Gain -6 -8 -10 -50 - Ambient Temperature ( Condition f=885MHz =2.7V, DD INV V 1=1.85V, V 2=0V, V CTL CTL 800MHz@Low Gain P-1dB(IN) vs. Temperature 18 16 P-1dB(IN -50 - ...
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... Ambient Temperature ( Condition f1=885MHz, f2=f1+100kHz, Pin=-20dBm =2.7V, DD INV V 1=1.85V, V 2=0V, V CTL CTL 0.5 0.4 0.3 0.2 0 100 - Condition 3=0V CTL NJG1125PB5 800MHz@Low Gain I vs. Temperature - Ambient Temperature ( C) RF=OFF =2.7V, DD INV V 1=1.85V, V 2=0V, V 3=0V CTL CTL CTL 100 - 37 - ...
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... NJG1125PB5 ELECTRICAL CHARACTERISTICS (800MHz Band Low Gain Mode) Condition: Ta=+25°C, V S11, S22 VSWR - =2.7V, V 1=1.85V INV CTL CTL 2=0V, V 3=0V CTL S21, S12 Zin, Zout ...
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... ELECTRICAL CHARACTERISTICS (800MHz Band Low Gain Mode) Condition: Ta=+25° S11, S22 (f=50MHz~20GHz) 800MHz @Low Gain k factor vs. frequency frequency(GHz) k factor (f=50MHz~20GHz) =V =2.7V, V 1=1.85V, V INV CTL CTL 15 20 NJG1125PB5 2=0V, V 3=0V CTL S21, S12 (f=50MHz~20GHz ...
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... NJG1125PB5 ELECTRICAL CHARACTERISTICS (1.7GHz Band High Gain Mode) 1.7GHz@High Gain Pout vs. Pin Pout -5 -10 -15 -20 P-1dB(IN)=-12.3dBm -25 -40 -30 -20 Pin (dBm) Condition Ta=+25°C, f=1860MHz =2.7V, DD INV V 1=0V, V 2=1.85V, V CTL CTL 1.7GHz@High Gain NF vs. frequency 4 3 1.5 1 0.5 0 1.7 1.75 1.8 1.85 frequency (GHz) Condition Ta=+25° ...
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... Condition Ta=+25°C, f=1.84~1.88GHz =2.7V, DD INV V 1=0V, V 2=1.85V, V CTL CTL 1.88 1.89 1.8 Condition 3=1.85V CTL NJG1125PB5 1.7GHz@High Gain OIP3,IIP3 vs. frequency OIP3 IIP3 1.82 1.84 1.86 1.88 frequency (GHz) Ta=+25°C, f1=1.8~1.90GHz, f2=f1+100kHz, Pin=-30dBm =2.7V, DD INV V 1=0V, V 2=1.85V, V 3=1.85V CTL CTL CTL ...
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... NJG1125PB5 ELECTRICAL CHARACTERISTICS (1.7GHz Band High Gain Mode) 1.7GHz@High Gain Gain Gain 2.4 2.6 2 (V) DD INV Condition Ta=+25°C, f=1860MHz, V 1=0V, V 2=1.85V, V CTL CTL 1.7GHz@High Gain P-1dB(IN) vs -10 -12 P-1dB(IN) -14 -16 -18 -20 -22 2.4 2.6 2 (V) DD ...
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... ELECTRICAL CHARACTERISTICS (1.7GHz Band High Gain Mode) 1.7GHz@High Gain 2.5 2 1.5 1 0.5 0 2.4 2.6 2 (V) DD INV Condition Ta=+25°C, RF=OFF V 1=0V, V 2=1.85V, V CTL CTL INV 3.4 3.6 3.8 3=1.85V CTL NJG1125PB5 - 43 - ...
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... NJG1125PB5 ELECTRICAL CHARACTERISTICS (1.7GHz Band High Gain Mode) 1.7GHz@High Gain Gain, NF vs. Temperature 20 Gain -50 - Ambient Temperature ( Condition f=1860MHz =2.7V, DD INV V 1=0V, V 2=1.85V, V CTL CTL 1.7GHz@High Gain P-1dB(IN) vs. Temperature -6 -8 P-1dB(IN) -10 -12 -14 -16 -18 -20 -22 -50 - ...
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... ELECTRICAL CHARACTERISTICS (1.7GHz Band High Gain Mode) 1.7GHz@High Gain I vs. Temperature DD 4 3 1.5 1 0.5 0 -50 - Ambient Temperature ( Condition RF=OFF =2.7V, DD INV V 1=0V, V 2=1.85V, V CTL CTL 75 100 o C) 3=1.85V CTL NJG1125PB5 - 45 - ...
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... NJG1125PB5 ELECTRICAL CHARACTERISTICS (1.7GHz Band High Gain Mode) Condition: Ta=+25° S11, S22 VSWR - =2.7V, V 1=0V, V 2=1.85V, V INV CTL CTL 3=1.85V CTL S21, S12 Zin, Zout ...
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... ELECTRICAL CHARACTERISTICS (1.7GHz Band High Gain Mode) Condition: Ta=+25° S11, S22 (f=50MHz~20GHz) 1.7GHz @High Gain k factor vs. frequency frequency(GHz) k factor (f=50MHz~20GHz =2.7V, V 1=0V, V 2=1.85V, V INV CTL CTL (f=50MHz~20GHz NJG1125PB5 3=1.85V CTL S21, S12 - 47 - ...
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... NJG1125PB5 ELECTRICAL CHARACTERISTICS (1.7GHz Band Low Gain Mode) 1.7GHz@Low Gain Pout vs. Pin 10 0 -10 Pout -20 -30 -40 -50 P-1dB(IN)=+12.6dBm -60 -40 -30 -20 -10 Pin (dBm) Condition Ta=+25°C, f=1860MHz =2.7V, DD INV V 1=0V, V 2=1.85V, V CTL CTL 1.7GHz@Low Gain NF vs. frequency 1.7 1.75 1.8 1.85 frequency (GHz) Condition Ta=+25° ...
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... Condition Ta=+25°C, f=1.84~1.88GHz =2.7V, DD INV V 1=0V, V 2=1.85V, V CTL CTL 9 8 OIP3 1.88 1.89 1.8 Condition Ta=+25°C, f1=1.8~1.9GHz, f2=f1+100kHz, Pin=-16dBm, V 3=0V CTL V NJG1125PB5 1.7GHz@Low Gain OIP3,IIP3 vs. frequency IIP3 1.82 1.84 1.86 1.88 frequency (GHz =2.7V, DD INV 1=0V, V 2=1.85V, V 3=0V CTL CTL CTL 1 ...
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... NJG1125PB5 ELECTRICAL CHARACTERISTICS (1.7GHz Band Low Gain Mode) 1.7GHz@Low Gain Gain Gain -10 -11 2.4 2.6 2 (V) DD INV Condition Ta=+25°C, f=1860MHz, V 1=0V, V 2=1.85V, V CTL CTL 1.7GHz@Low Gain P-1dB(IN) vs P-1dB(IN 2.4 2.6 2 (V) DD INV Condition Ta=+25° ...
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... Gain IMD3 vs -60 -65 IMD3 -70 -75 -80 2.4 2.6 2 (V) DD INV Condition Ta=+25°C, f1=1860MHz, f2=f1+100kHz, Pin=-16dBm, V 1=0V, V 2=1.85V, V CTL CTL , V INV 0.05 0.04 0.03 0.02 0.01 0 3.4 3.6 3.8 2.4 Condition 3=0V CTL NJG1125PB5 1.7GHz@Low Gain I vs INV I DD 2.6 2.8 3 3.2 3.4 3 (V) DD INV Ta=+25°C, RF=OFF, V 1=0V, V 2=1.85V, V 3=0V CTL CTL CTL 3 ...
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... NJG1125PB5 ELECTRICAL CHARACTERISTICS (1.7GHz Band Low Gain Mode) 1.7GHz@Low Gain Gain, NF vs. Temperature Gain -10 -12 -50 - Ambient Temperature ( Condition f=1860MHz =2.7V, DD INV V 1=0V, V 2=1.85V, V CTL CTL 1.7GHz@Low Gain P-1dB(IN) vs. Temperature P-1dB(IN -50 - Ambient Temperature ( ...
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... Ambient Temperature ( Condition f1=1860MHz, f2=f1+100kHz, Pin=-16dBm =2.7V, DD INV V 1=0V, V 2=1.85V, V CTL CTL 0.5 0.4 0.3 0.2 0 100 - Condition 3=0V CTL NJG1125PB5 1.7GHz@Low Gain I vs. Temperature - Ambient Temperature ( C) RF=OFF =2.7V, DD INV V 1=0V, V 2=1.85V, V 3=0V CTL CTL CTL 100 - 53 - ...
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... NJG1125PB5 ELECTRICAL CHARACTERISTICS (1.7GHz Band Low Gain Mode) Condition: Ta=+25°C, V S11, S22 VSWR - =2.7V, V 1=0V, V 2=1.85V INV CTL CTL 3=0V CTL S21, S12 Zin, Zout ...
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... ELECTRICAL CHARACTERISTICS (1.7GHz Band Low Gain Mode) Condition: Ta=+25° S11, S22 (f=50MHz~20GHz) 1.7GHz @Low Gain k factor vs. frequency frequency(GHz) k factor (f=50MHz~20GHz) =2.7V, V 1=0V, V 2=1.85V, V INV CTL CTL (f=50MHz~20GHz NJG1125PB5 3=0V CTL S21, S12 - 55 - ...
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... NJG1125PB5 TEST CIRCUIT L10 12nH RF IN1 (800MHz) L9 12nH RFIN1 GND 13 RF IN2 L6 RFIN2 (2.1GHz) 1.5nH 14 L5 Logic 2.2nH Circuit GND 15 RF IN3 L2 RFIN3 (1.7GHz) 2.2nH 16 L1 2.7nH PARTS LIST Parts ID L1~ L11 MURATA (LQP03T) 0603size C1~C6 MURATA (GRM03) 0603size PRECAUTIONS 1) Please locate C2, C6 close to L3. ...
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... IN3 (1.7GHz) (Top View CTL CTL C4 C5 L11 CTL INV PCB (FR-4) t=0.2mm MICROSTRIP LINE WIDTH=0.4mm (Z PCB SIZE=35.4mm X 17.0mm NJG1125PB5 RF OUT1 (800MHz OUT2 (2.1GHz OUT3 (1.7GHz) =50ohm ...
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... NJG1125PB5 MEASUREMENT BLOCK DIAGRAM S parameter Measurement Block Diagram Noise Source freq1 freq1=865.0MHz Isolator Signal Generator Signal Generator freq2=865.1MHz Isolator freq2 - Input RF Output DUT Port2 Port1 Network Analyzer RF Output RF Input DUT Input N.S. Output NF Analyzer Meter Noise Figure Measurement Block Diagram RF Input ...
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... Do NOT chemically make gas or powder with this product. • To waste this product, please obey the relating law of your country. This product may be damaged with electric static discharge (ESD) or spike voltage. Please handle with care to avoid these damages. 1Pin INDEX NJG1125PB5 (SIDE VIEW) UNIT : mm PCB ...