njg1125pb5 New Japan Radio Co.,Ltd, njg1125pb5 Datasheet - Page 32

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njg1125pb5

Manufacturer Part Number
njg1125pb5
Description
Njg1125pb5 W-cdma Triple Lna Gaas Mmic
Manufacturer
New Japan Radio Co.,Ltd
Datasheet
NJG1125PB5
- 32 -
ELECTRICAL CHARACTERISTICS (800MHz Band Low Gain Mode)
-10
-20
-30
-40
-50
10
11
10
0
9
8
7
6
5
4
3
750
-40
Condition
Condition
Ta=+25°C,
f=750~1GHz,
V
V
Ta=+25°C,
f=885MHz,
V
V
DD
CTL
DD
CTL
-30
800
= V
=V
1=1.85V, V
800MHz@Low Gain
1=1.85V, V
800MHz@Low Gain
Pout
NF vs. frequency
INV
INV
-20
NF
frequency (MHz)
=2.7V,
Pout vs. Pin
=2.7V,
850
Pin (dBm)
P-1dB(IN)=+9.0dBm
CTL
-10
CTL
2=0V, V
2=0V, V
900
0
CTL
CTL
950
10
3=0V
3=0V
1000
20
-10
-11
-12
-13
-14
-6
-7
-8
-9
-100
-20
-40
-60
-80
-40
20
0
-40
Condition
Condition
Ta=+25°C,
f=885MHz,
V
V
Gain
DD
CTL
Ta=+25°C,
f1=885MHz, f2=f1+100kHz,
V
V
-30
Pout
DD
CTL
= V
-30
1=1.85V, V
800MHz@Low Gain
= V
P-1dB(IN)=+9.0dBm
800MHz@Low Gain
1=1.85V, V
Gain, IDD vs. Pin
INV
Pout, IM3 vs. Pin
IM3
-20
INV
RF Power (dBm)
=2.7V,
-20
=2.7V,
Pin (dBm)
-10
CTL
-10
CTL
IIP3=+12.2dBm
2=0V, V
2=0V, V
0
0
CTL
CTL
10
3=0V
IDD
10
3=0V
20
20
0.6
0.5
0.4
0.3
0.2
0.1
0
-0.1
-0.2

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