sp000223256 Infineon Technologies Corporation, sp000223256 Datasheet - Page 5

• Manufacturer Part Number: sp000223256
• Description: N-channel Mosfets >500v?900v Power Transistor
• Manufacturer: Infineon Technologies Corporation

Rev. 2.0
5 Typ. output characteristics
I
parameter: V
7 Drain-source on-state resistance
R
D
=f(V
DS(on)
0.6
0.5
0.4
0.3
0.2
0.1
35
30
25
20
15
10
DS
=f(T
0
5
0
-60
); T
0
j
); I
j
=150 °C
GS
D
-20
=9.9 A; V
5
20
98 %
GS
V
T
=10 V
DS
j
60
10
[°C]
typ
[V]
100
8 V
15
10 V
140
5.5 V
5 V
4.5 V
20 V
6 V
7 V
180
page 5
20
6 Typ. drain-source on-state resistance
R
parameter: V
8 Typ. transfer characteristics
I
parameter: T
D
DS(on)
=f(V
1.2
0.8
0.6
0.4
0.2
80
60
40
20
0
=f(I
GS
1
0
0
0
); |V
D
); T
GS
DS
j
j
|>2|I
=150 °C
2
10
D
|R
5 V
DS(on)max
4
V
I
D
GS
5.5 V
20
[A]
[V]
6
6 V
IPB60R199CP
7 V
30
C °25
8
6.5 V
C °150
10 V
2006-06-19
40
10