sp000223256 Infineon Technologies Corporation, sp000223256 Datasheet - Page 6

• Manufacturer Part Number: sp000223256
• Description: N-channel Mosfets >500v?900v Power Transistor
• Manufacturer: Infineon Technologies Corporation

Rev. 2.0
9 Typ. gate charge
V
parameter: V
11 Avalanche energy
E
GS
AS
=f(T
500
400
300
200
100
=f(Q
10
0
9
8
7
6
5
4
3
2
1
0
20
j
0
); I
gate
D
); I
=6.6 A; V
DD
D
=9.9 A pulsed
60
10
DD
=50 V
Q
T
gate
100
j
20
[°C]
[nC]
120 V
400 V
140
30
page 6
40
180
10 Forward characteristics of reverse diode
I
parameter: T
12 Drain-source breakdown voltage
V
F
=f(V
BR(DSS)
700
660
620
580
540
10
10
10
10
SD
-1
-60
2
1
0
=f(T
)
0
j
); I
j
-20
D
=0.25 mA
0.5
150 °C
20
V
T
SD
j
60
[°C]
25 °C
1
[V]
100
IPB60R199CP
1.5
25 °C, 98%
150 °C, 98%
140
2006-06-19
180
2