std17n06l STMicroelectronics, std17n06l Datasheet

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std17n06l

Manufacturer Part Number
std17n06l
Description
N - Channel Enhancement Mode Low Threshold Power Mos Transistor
Manufacturer
STMicroelectronics
Datasheet

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APPLICATIONS
ABSOLUTE MAXIMUM RATINGS
( ) Pulse width limited by safe operating area
January 1995
STD17N05L
STD17N06L
Symbol
I
TYPICAL R
AVALANCHE RUGGED TECHNOLOGY
100% AVALANCHE TESTED
REPETITIVE AVALANCHE DATA AT 100
LOW GATE CHARGE
LOGIC LEVEL COMPATIBLE INPUT
175
APPLICATION ORIENTED
CHARACTERIZATION
THROUGH-HOLE IPAK (TO-251) POWER
PACKAGE IN TUBE (SUFFIX ”-1”)
SURFACE-MOUNTING DPAK (TO-252)
POWER PACKAGE IN TAPE & REEL
(SUFFIX ”T4”)
HIGH CURRENT, HIGH SPEED SWITCHING
SOLENOID AND RELAY DRIVERS
REGULATORS
DC-DC & DC-AC CONVERTERS
MOTOR CONTROL, AUDIO AMPLIFIERS
AUTOMOTIVE ENVIRONMENT (INJECTION,
ABS, AIR-BAG, LAMPDRIVERS, Etc.)
V
D M
V
V
P
T
DG R
I
I
T
stg
D S
GS
D
D
tot
TYPE
( )
j
o
C OPERATING TEMPERATURE
Drain-source Voltage (V
Drain- gate Voltage (R
Gate-source Voltage
Drain Current (continuous) at T
Drain Current (continuous) at T
Drain Current (pulsed)
Total Dissipation at T
Derating Factor
Storage Temperature
Max. Operating Junction Temperature
DS(on)
LOW THRESHOLD POWER MOS TRANSISTOR
V
50 V
60 V
= 0.065
DSS
< 0.085
< 0.085
Parameter
R
DS( on)
c
GS
= 25
GS
N - CHANNEL ENHANCEMENT MODE
= 20 k )
= 0)
o
C
c
c
17 A
17 A
= 25
= 100
I
D
o
C
o
C
o
C
INTERNAL SCHEMATIC DIAGRAM
STD17N05L
(Suffix ”-1”)
TO-251
IPAK
50
50
-65 to 175
Value
1
0.37
175
17
12
68
55
15
2
STD17N05L
STD17N06L
3
STD17N06L
60
60
(Suffix ”T4”)
TO-252
DPAK
1
W/
Unit
3
o
o
W
A
V
V
V
A
A
C
C
o
1/10
C

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std17n06l Summary of contents

Page 1

... TO-251 (Suffix ”-1”) INTERNAL SCHEMATIC DIAGRAM STD17N05L = 100 STD17N05L STD17N06L DPAK TO-252 (Suffix ”T4”) Value Unit STD17N06L 0. -65 to 175 C o 175 C 1/10 ...

Page 2

... max, < 1%) j max, < 1 unless otherwise specified) case Test Conditions I = 250 for STD17N05L for STD17N06L V = Max Rating Max Rating x 0 125 Test Conditions = 250 8.5 A ...

Page 3

... GS (see test circuit, figure 5) Test Conditions di/dt = 100 150 (see test circuit, figure 5) Thermal Impedance STD17N05L/STD17N06L Min. Typ. Max. Unit 350 500 ns 130 Min. Typ. Max. Unit ...

Page 4

... STD17N05L/STD17N06L Derating Curve Transfer Characteristics Static Drain-source On Resistance 4/10 Output Characteristics Transconductance Gate Charge vs Gate-source Voltage ...

Page 5

... Capacitance Variations Normalized On Resistance vs Temperature Turn-off Drain-source Voltage Slope STD17N05L/STD17N06L Normalized Gate Threshold Voltage vs Temperature Turn-on Current Slope Cross-over Time 5/10 ...

Page 6

... STD17N05L/STD17N06L Switching Safe Operating Area Source-drain Diode Forward Characteristics Fig. 1: Unclamped Inductive Load Test Circuits 6/10 Accidental Overload Area Fig. 2: Unclamped Inductive Waveforms ...

Page 7

... Fig. 3: Switching Times Test Circuits For Resistive Load Fig. 5: Test Circuit For Inductive Load Switching And Diode Recovery Times STD17N05L/STD17N06L Fig. 4: Gate Charge Test Circuit 7/10 ...

Page 8

... STD17N05L/STD17N06L TO-251 (IPAK) MECHANICAL DATA DIM. MIN. A 2.2 A1 0.9 A3 0.7 B 0. 0. 6.4 G 4 8/10 mm TYP. MAX. MIN. 2.4 0.086 1.1 0.035 1.3 0.027 0.9 0.025 5.4 0.204 0.85 0.3 0.95 0.6 0.017 0.6 0.019 6.2 0.236 6.6 0.252 4.6 0.173 16.3 0.626 9.4 0.354 1.2 0.031 0 inch TYP. MAX. 0.094 0.043 0.051 ...

Page 9

... TO-252 (DPAK) MECHANICAL DATA mm DIM. MIN. TYP. A 2.2 A1 0.9 A2 0.03 B 0.64 B2 5.2 C 0. 6.4 G 4.4 H 9.35 L2 0.8 L4 0.6 H DETAIL ”A” STD17N05L/STD17N06L MAX. MIN. 2.4 0.086 1.1 0.035 0.23 0.001 0.9 0.025 5.4 0.204 0.6 0.017 0.6 0.019 6.2 0.236 6.6 0.252 4.6 0.173 10.1 0.368 1 0.023 L4 inch TYP. MAX. 0.094 0.043 0.009 0.035 0.212 ...

Page 10

... STD17N05L/STD17N06L Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned in this publication are subject to change without notice ...

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