std17n06l STMicroelectronics, std17n06l Datasheet - Page 3

• Manufacturer Part Number: std17n06l
• Description: N - Channel Enhancement Mode Low Threshold Power Mos Transistor
• Manufacturer: STMicroelectronics

ELECTRICAL CHARACTERISTICS (continued)
SWITCHING RESISTIVE LOAD
SWITCHING INDUCTIVE LOAD
SOURCE DRAIN DIODE
( ) Pulsed: Pulse duration = 300 s, duty cycle 1.5 %
( ) Pulse width limited by safe operating area
Safe Operating Area
Symbol
Symbol
Symbol
(di/dt)
V
I
t
SDM
t
I
S D
r(Vof f)
Q
Q
d(on)
RRM
Q
I
Q
t
S D
t
t
t
rr
gs
gd
c
r
f
g
rr
( )
( )
on
Turn-on Time
Rise Time
Turn-on Current Slope
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Off-voltage Rise Time
Fall Time
Cross-over Time
Source-drain Current
Source-drain Current
(pulsed)
Forward On Voltage
Reverse Recovery
Time
Reverse Recovery
Charge
Reverse Recovery
Current
Parameter
Parameter
Parameter
V
R
(see test circuit, figure 3)
V
R
(see test circuit, figure 5)
V
V
R
(see test circuit, figure 5)
I
I
V
(see test circuit, figure 5)
SD
SD
DD
GS
DD
GS
DD
DD
GS
DD
= 17 A
= 17 A
= 30 V
= 40 V
= 40 V
= 50
= 50
= 50
= 40 V
= 30 V
Test Conditions
Test Conditions
Test Conditions
V
di/dt = 100 A/ s
V
V
V
I
I
I
I
D
D
D
G S
D
T
GS
GS
GS
j
= 8.5 A
= 17 A
= 17 A
= 17 A
= 150
= 0
= 5 V
= 5 V
= 5 V
Thermal Impedance
o
C
V
GS
= 5 V
Min.
Min.
Min.
STD17N05L/STD17N06L
Typ.
Typ.
Typ.
0.13
350
130
100
180
60
18
70
65
6
9
4
Max.
Max.
Max.
500
100
150
260
1.5
90
26
17
68
Unit
A/ s
Unit
Unit
nC
nC
nC
ns
ns
ns
ns
ns
ns
A
A
V
A
C
3/10