std3nm50 STMicroelectronics, std3nm50 Datasheet

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std3nm50

Manufacturer Part Number
std3nm50
Description
N-channel 500v - 2.5ohm - 3a Dpak/ipak Zener-protected Mdmesh??power Mosfet
Manufacturer
STMicroelectronics
Datasheet

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STD3NM50
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DESCRIPTION
The MDmesh™ is a new revolutionary MOSFET
technology that associates the Multiple Drain pro-
cess with the Company’s PowerMESH™ horizontal
layout. The resulting product has an outstanding low
on-resistance, impressively high dv/dt and excellent
avalanche characteristics. The adoption of the
Company’s proprietary strip technique yields overall
dynamic performance that is significantly better than
that of similar completition’s products.
APPLICATIONS
The MDmesh™ family is very suitable for increase
the power density of high voltage converters allow-
ing system miniaturization and higher efficiencies.
ABSOLUTE MAXIMUM RATINGS
(•)Pulse width limited by safe operating area
(1)I
February 2004
STD3NM50
STD3NM50-1
V
TYPICAL R
HIGH dv/dt AND AVALANCHE CAPABILITIES
IMPROVED ESD CAPABILITY
LOW INPUT CAPACITANCE AND GATE
CHARGE
LOW GATE INPUT RESISTANCE
TIGHT PROCESS CONTROL AND HIGH
MANUFACTORING YIELDS
SD
Symbol
dv/dt(1)
I
ESD(G-S)
DM
P
< 3A, di/dt< 400A/µs, V
V
T
TOT
I
I
T
stg
GS
D
D
j
( )
TYPE
Gate- source Voltage
Drain Current (continuous) at T
Drain Current (continuous) at T
Drain Current (pulsed)
Total Dissipation at T
Gate source ESD (HBM-C=100pF, R=15K
Derating Factor
Peak Diode Recovery voltage slope
Storage Temperature
Max. Operating Junction Temperature
DS
(on) = 2.5
N-CHANNEL 550V @ Tjmax- 2.5 - 3A DPAK/IPAK
(
@
DD
V
550V
550V
Tjmax)
DSS
< V
(BR)DSS
R
C
, T
< 3
< 3
Parameter
DS(on)
= 25°C
J
<T
JMAX
C
C
Zener-Protected MDmesh™ MOSFET
= 25°C
= 100°C
3 A
3 A
I
D
INTERNAL SCHEMATIC DIAGRAM
TO-252
DPAK
1
3
–65 to 150
STD3NM50-1
Value
1.89
0.37
±30
150
12
46
15
3
4
STD3NM50
TO-251
IPAK
1
2
3
W/°C
Unit
V/ns
KV
°C
°C
W
V
A
A
A
1/10

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std3nm50 Summary of contents

Page 1

... SD DD (BR)DSS February 2004 Zener-Protected MDmesh™ MOSFET R I DS(on) D < < INTERNAL SCHEMATIC DIAGRAM Parameter = 25° 100° 25° <T J JMAX STD3NM50 STD3NM50 DPAK IPAK TO-252 TO-251 Value ± 0.37 15 –65 to 150 150 Unit ...

Page 2

... STD3NM50/STD3NM50-1 THERMAL DATA Rthj-case Thermal Resistance Junction-case Max Rthj-amb Thermal Resistance Junction-ambient Max T Maximum Lead Temperature For Soldering Purpose l AVALANCHE CHARACTERISTICS Symbol I Avalanche Current, Repetitive or Not-Repetitive AR (pulse width limited Single Pulse Avalanche Energy AS (starting ° ELECTRICAL CHARACTERISTICS (T OFF ...

Page 3

... 100 25° (see test circuit, Figure 3A, di/dt = 100A/µ 100 150° (see test circuit, Figure 5) Test Conditions Igs=± 1mA (Open Drain) STD3NM50/STD3NM50-1 Min. Typ. Max. Unit 5.5 nC 2.5 nC 2.4 nC Min. Typ. Max. Unit ...

Page 4

... STD3NM50/STD3NM50-1 Safe Operating Area For DPAK / IPAK Output Characteristics Transconductance 4/10 Thermal Impedance For DPAK / IPAK Transfer Characteristics Static Drain-source On Resistance ...

Page 5

... Gate Charge vs Gate-source Voltage Normalized Gate Threshold Voltage vs Temp. Source-drain Diode Forward Characteristics STD3NM50/STD3NM50-1 Capacitance Variations Normalized On Resistance vs Temperature Normalized BVdss vs Temperature 5/10 ...

Page 6

... STD3NM50/STD3NM50-1 Fig. 1: Unclamped Inductive Load Test Circuit Fig. 3: Switching Times Test Circuit For Resistive Load Fig. 5: Test Circuit For Inductive Load Switching And Diode Recovery Times 6/10 Fig. 2: Unclamped Inductive Waveform Fig. 4: Gate Charge test Circuit ...

Page 7

... TO-252 (DPAK) MECHANICAL DATA mm DIM. MIN. TYP. A 2.20 A1 0.90 A2 0.03 B 0.64 B2 5.20 C 0.45 C2 0.48 D 6.00 E 6.40 G 4.40 H 9.35 L2 0 STD3NM50/STD3NM50-1 inch MAX. MIN. TYP. 2.40 0.087 1.10 0.035 0.23 0.001 0.90 0.025 5.40 0.204 0.60 0.018 0.60 0.019 6.20 0.236 6.60 0.252 4.60 0.173 10.10 0.368 0.031 1.00 0.024 MAX. 0.094 0.043 0.009 0.035 0.213 ...

Page 8

... STD3NM50/STD3NM50-1 DIM. MIN. A 2.2 A1 0.9 A3 0.7 B 0. 0. 6.4 G 4 0.8 L2 8/10 TO-251 (IPAK) MECHANICAL DATA mm TYP. MAX. 2.4 1.1 1.3 0.9 5.4 0.85 0.3 0.95 0.6 0.6 6.2 6.6 4.6 16.3 9.4 1.2 0 inch MIN. TYP. MAX. 0.086 0.094 0.035 0.043 0.027 0.051 0.025 0.031 0.204 0.212 0.033 0.012 0.037 0.017 0.023 0.019 ...

Page 9

... K0 2.55 2.75 0.100 0.108 P0 3.9 4.1 0.153 0.161 P1 7.9 8.1 0.311 0.319 P2 1.9 2.1 0.075 0.082 R 40 1.574 W 15.7 16.3 0.618 * on sales type TUBE SHIPMENT (no suffix)* MAX. 0.476 0.641 STD3NM50/STD3NM50-1 All dimensions are in millimeters REEL MECHANICAL DATA mm inch DIM. MIN. MAX. MIN. A 330 12.992 B 1.5 0.059 C 12.8 13.2 0.504 0.520 D 20.2 0.795 G 16.4 18.4 0.645 0.724 ...

Page 10

... STD3NM50/STD3NM50-1 Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice ...

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