std3nm50 STMicroelectronics, std3nm50 Datasheet - Page 2

• Manufacturer Part Number: std3nm50
• Description: N-channel 500v - 2.5ohm - 3a Dpak/ipak Zener-protected Mdmesh??power Mosfet
• Manufacturer: STMicroelectronics

STD3NM50/STD3NM50-1
THERMAL DATA
AVALANCHE CHARACTERISTICS
ELECTRICAL CHARACTERISTICS (T
OFF
ON (1)
DYNAMIC
Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.
2/10
Rthj-case
Rthj-amb
V
Symbol
Symbol
Symbol
Symbol
R
V
(BR)DSS
g
I
C
I
DS(on)
C
E
GS(th)
C
fs
I
DSS
GSS
R
AR
T
oss
AS
iss
rss
G
(1)
l
Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by T
Single Pulse Avalanche Energy
(starting T
Drain-source
Breakdown Voltage
Zero Gate Voltage
Drain Current (V
Gate-body Leakage
Current (V
Gate Threshold Voltage V
Static Drain-source On
Resistance
Forward Transconductance V
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
Gate Input Resistance
Thermal Resistance Junction-case Max
Thermal Resistance Junction-ambient Max
Maximum Lead Temperature For Soldering Purpose
Parameter
Parameter
Parameter
j
DS
= 25 °C, I
= 0)
GS
= 0)
D
Parameter
= I
j
max)
AR
I
V
V
V
V
D
DS
DS
GS
DS
GS
, V
= 1 mA, V
CASE
I
f=1 MHz Gate DC Bias = 0
Test Signal Level = 20mV
Open Drain
V
D
DD
= Max Rating
= Max Rating, T
= ± 20V
= V
= 10V, I
DS
DS
= 3 A
Test Conditions
Test Conditions
= 50 V)
GS
> I
= 25V, f = 1 MHz, V
= 25 °C UNLESS OTHERWISE SPECIFIED)
, I
Test Conditions
D(on)
D
GS
D
= 1.5A
= 250µA
= 0
x R
DS(on)max,
C
= 125 °C
GS
= 0
Min.
Min.
500
3
Min.
Max Value
2.73
62.5
300
130
1
Typ.
Typ.
Typ.
140
0.7
2.5
40
4
4
4
Max.
Max.
Max.
± 5
10
1
5
3
°C/W
°C/W
Unit
Unit
Unit
Unit
mJ
°C
µA
µA
µA
pF
pF
pF
A
V
V
S