oq2541u NXP Semiconductors, oq2541u Datasheet - Page 30
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oq2541u
Manufacturer Part Number
oq2541u
Description
Sdh/sonet Data And Clock Recovery Unit Stm1/4/16 Oc3/12/48 Ge
Manufacturer
NXP Semiconductors
Datasheet
1.OQ2541U.pdf
(36 pages)
- Current page: 30 of 36
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Philips Semiconductors
Table 7 Physical characteristics of bare die
Thermal considerations
To improve heat transfer away from the product, a large area fill is recommended as a die pad. The die should be
mounted on this with a heat conductive glue. Bonding ALL supply and ground pads is essential for the electrical
performance, but also improves heat transfer to the die pad or other copper area fills. The more copper is leading away
from the die, the better the heat transport. On its turn, this copper should be able to loose its heat to the environment
through radiation, natural convection (non forced airflow over the printed-circuit board) or forced cooling.
1999 May 27
Glass passivation
Bonding pad dimension
Metallization
Thickness
Size
Backing
Attache temperature
Attache time
SDH/SONET data and clock recovery unit
STM1/4/16 OC3/12/48 GE
NAME
0.8 m silicon nitride on top of 0.9 m PSG (PhosphoSilicate Glass)
minimum dimension of exposed metallization is 90
1.8 m AlCu (1% Cu)
380 m nominal
2.360
silicon; electrically connected to V
<440 C; recommended die attache is glue
<15 s
2.360 mm (5.5696 mm
30
2
)
EE
DESCRIPTION
potential through substrate contacts
OQ2541HP; OQ2541U
90 m (pad size = 100
Product specification
100 m)
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