k4t51163qi-hpf7 Samsung Semiconductor, Inc., k4t51163qi-hpf7 Datasheet - Page 10

• Manufacturer Part Number: k4t51163qi-hpf7
• Description: 512mb I-die Ddr2 Sdram
• Manufacturer: Samsung Semiconductor, Inc.

7.2 Operating Temperature Condition
Note :
1. Operating Temperature is the case surface temperature on the center/top side of the DRAM.
7.3 Input DC Logic Level
7.4 Input AC Logic Level
Note :
1. For information related to V
7.5 AC Input Test Conditions
Note :
1. Input waveform timing is referenced to the input signal crossing through the V
2. The input signal minimum slew rate is to be maintained over the range from V
3. AC timings are referenced with input waveforms switching from V
K4T51163QI
tude allowed for overshoot and undershoot.
max for falling edges as shown in the below figure.
transitions.
V
SWING(MAX)
Symbol
SLEW
Symbol
Symbol
V
V
V
T
V
REF
IH
Symbol
V
IL
OPER
IH
(DC)
(DC)
IL
(AC)
(AC)
DC input logic high
DC input logic low
AC input logic high
AC input logic low
PEAK
Parameter
Input signal maximum peak to peak swing
value, Refer to overshoot/undershoot specification in device operation and timing datasheet; maximum peak ampli-
Parameter
V
Input signal minimum slew rate
Falling Slew =
SWING(MAX)
Operating Temperature
Input reference voltage
Parameter
delta TF
Condition
V
REF
V
< AC Input Test Signal Waveform >
REF
- V
delta TF
Min.
- 0.3
+ 0.125
IL
(AC) max
V
V
IL
REF
SSQ
10 of 42
(AC) to V
Min.
+ 0.200
- V
PEAK
DDR2-667, DDR2-800
IH
delta TR
IH/IL
REF
(AC) on the positive transitions and V
V
V
Rising Slew =
(AC) level applied to the device under test.
REF
to V
DDQ
-40 to 95
Max.
Rating
- 0.125
IH
+ 0.3
(AC) min for rising edges and the range from V
0.5 * V
Value
1.0
1.0
V
DDQ
V
IH
Industrial
V
DDQ
(AC) min - V
REF
V
V
V
V
V
V
V
delta TR
Max.
DDQ
IH
IH
REF
IL
IL
SS
+ V
(DC) max
(AC) max
- 0.200
(AC) min
(DC) min
PEAK
Units
Units
REF
V
V
°C
Units
V/ns
IH
Rev. 1.0 August 2009
V
V
(AC) to V
DDR2 SDRAM
IL
(AC) on the negative
Units
Notes
Notes
V
V
1, 2
REF
Notes
2, 3
1
1
to V
IL
(AC)