k4h560838f Samsung Semiconductor, Inc., k4h560838f Datasheet - Page 15

• Manufacturer Part Number: k4h560838f
• Description: 256mb F-die Ddr Sdram Specification
• Manufacturer: Samsung Semiconductor, Inc.

DDR SDRAM 256Mb F-die (x8, x16)
AC Timming Parameters & Specifications
Row cycle time
Refresh row cycle time
Row active time
RAS to CAS delay
Row precharge time
Row active to Row active delay
Write recovery time
Last data in to Read command
Col. address to Col. address delay
Clock cycle time
Clock high level width
Clock low level width
DQS-out access time from CK/CK
Output data access time from CK/CK
Data strobe edge to ouput data edge
Read Preamble
Read Postamble
CK to valid DQS-in
DQS-in setup time
DQS-in hold time
DQS falling edge to CK rising-setup time
DQS falling edge from CK rising-hold time
DQS-in high level width
DQS-in low level width
DQS-in cycle time
Address and Control Input setup time(fast)
Address and Control Input hold time(fast)
Address and Control Input setup time(slow)
Address and Control Input hold time(slow)
Data-out high impedence time from CK/CK
Data-out low impedence time from CK/CK
Output Slew Rate Matching Ratio(rise to fall)
Parameter
CL=2.0
CL=2.5
tDQSCK
tWPRES
Symbol
tDQSQ
tWPRE
tDQSH
tRPRE
tDQSS
tDQSL
tSLMR
tRPST
tWTR
tRCD
tRRD
tCCD
tDSH
tDSC
tRFC
tRAS
tDSS
tWR
tRC
tRP
tCK
tCH
tAC
tHZ
tCL
tLZ
tIH
tIH
tIS
tIS
(DDR333@CL=2.5)
Min
0.45
0.45
0.75
0.25
0.35
0.35
0.75
0.75
0.67
-0.6
-0.7
-0.7
-0.7
7.5
0.9
0.4
0.2
0.2
0.9
0.8
0.8
60
72
42
18
18
12
15
6
1
1
0
-
B3
Max
0.55
0.55
+0.6
+0.7
0.45
1.25
+0.7
+0.7
70K
1.1
0.6
1.1
1.5
12
12
(DDR266@CL=2.0)
-0.75
-0.75
-0.75
-0.75
Min
0.45
0.45
0.75
0.25
0.35
0.35
0.67
7.5
7.5
0.9
0.4
0.2
0.2
0.9
0.9
0.9
1.0
1.0
60
75
45
15
15
15
15
1
1
0
-
AA
+0.75
+0.75
120K
+0.75
+0.75
Max
0.55
0.55
1.25
1.1
0.5
1.1
0.6
1.5
12
12
(DDR266@CL=2.0)
-0.75
-0.75
-0.75
-0.75
0.45
0.75
0.25
0.35
Min
0.45
0.35
0.67
7.5
7.5
0.9
0.4
0.2
0.2
0.9
0.9
0.9
1.0
1.0
65
75
45
20
20
15
15
1
1
0
-
A2
+0.75
+0.75
Rev. 1.3 October, 2004
120K
+0.75
+0.75
Max
0.55
0.55
1.25
1.1
0.6
1.1
0.5
1.5
12
12
(DDR266@CL=2.5) Unit
-0.75
-0.75
-0.75
-0.75
Min
0.45
0.45
0.75
0.25
0.35
0.35
0.67
7.5
0.9
0.4
0.2
0.2
0.9
0.9
0.9
1.0
1.0
65
75
45
20
20
15
15
10
1
1
0
-
DDR SDRAM
B0
+0.75
+0.75
120K
Max
+0.75
+0.75
0.55
0.55
1.25
1.1
0.6
1.1
1.5
0.5
12
12
tCK
tCK
tCK
tCK
tCK
tCK
tCK
tCK
tCK
tCK
tCK
tCK
tCK
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
Note
i,5.7
i,5.7
12
3
1
1
i,
i,