k4h560838f Samsung Semiconductor, Inc., k4h560838f Datasheet - Page 16
![no-image](/images/no-image-200.jpg)
k4h560838f
Manufacturer Part Number
k4h560838f
Description
256mb F-die Ddr Sdram Specification
Manufacturer
Samsung Semiconductor, Inc.
Datasheet
1.K4H560838F.pdf
(23 pages)
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
k4h560838f-TCB3
Manufacturer:
SEC
Quantity:
37
Company:
Part Number:
k4h560838f-TCCC
Manufacturer:
SAMSUNG
Quantity:
487
Company:
Part Number:
k4h560838f-UCCC
Manufacturer:
SAMSUNG
Quantity:
218
System Characteristics for DDR SDRAM
The following specification parameters are required in systems using DDR333, DDR266 & DDR200 devices to ensure
proper system performance. these characteristics are for system simulation purposes and are guaranteed by design.
Table 1 : Input Slew Rate for DQ, DQS, and DM
Table 2 : Input Setup & Hold Time Derating for Slew Rate
Table 3 : Input/Output Setup & Hold Time Derating for Slew Rate
DDR SDRAM 256Mb F-die (x8, x16)
PARAMETER
DQ/DM/DQS input slew rate measured between
VIH(DC), VIL(DC) and VIL(DC), VIH(DC)
Mode register set cycle time
DQ & DM setup time to DQS
DQ & DM hold time to DQS
Control & Address input pulse width
DQ & DM input pulse width
Power down exit time
Exit self refresh to non-Read command
Exit self refresh to read command
Refresh interval time
Output DQS valid window
Clock half period
Data hold skew factor
DQS write postamble time
Active to Read with Auto precharge
command
Autoprecharge write recovery +
Precharge time
Input Slew Rate
Input Slew Rate
0.5 V/ns
0.4 V/ns
0.3 V/ns
0.5 V/ns
0.4 V/ns
0.3 V/ns
Parameter
AC CHARACTERISTICS
+100
+150
+50
tDS
+75
tIS
0
0
Symbol
tXSNR
tXSRD
tWPST
tDIPW
tPDEX
tREFI
tMRD
tQHS
tRAP
tIPW
tDAL
tQH
tDS
tDH
tHP
+150
tDH
+75
tIH
0
0
0
0
(tWR/tCK)
or tCHmin
(tRP/tCK)
(DDR333@CL=2.5))
tCLmin
-tQHS
Min
0.45
0.45
1.75
tHP
200
2.2
0.4
12
75
18
6
+
SYMBOL
DCSLEW
B3
Units
Units
ps
ps
ps
ps
ps
ps
Max
0.55
7.8
0.6
-
-
MIN
0.5
(tWR/tCK)
DDR333
or tCHmin
(tRP/tCK)
(DDR266@CL=2.0)
tCLmin
-tQHS
1.75
Min
200
tHP
0.5
0.5
2.2
7.5
0.4
15
75
20
+
Notes
Notes
MAX
4.0
k
k
k
AA
i
i
i
Max
0.75
7.8
0.6
-
-
MIN
0.5
DDR266
or tCHmin
(tWR/tCK)
(tRP/tCK)
(DDR266@CL=2.0)
tCLmin
-tQHS
1.75
Min
200
tHP
0.5
0.5
2.2
7.5
0.4
15
75
20
+
MAX
4.0
A2
Max
0.75
7.8
0.6
Rev. 1.3 October, 2004
-
-
MIN
0.5
DDR200
or tCHmin
(tWR/tCK)
(tRP/tCK)
(DDR266@CL=2.5))
tCLmin
-tQHS
Min
1.75
200
tHP
0.5
0.5
2.2
7.5
0.4
15
75
20
+
MAX
4.0
DDR SDRAM
B0
Max
0.75
7.8
0.6
-
-
Units
V/ns
Unit
tCK
tCK
tCK
ns
ns
ns
ns
ns
ns
ns
us
ns
ns
ns
Notes
a, m
10, 11
Note
j, k
j, k
13
11
11
8
8
4
2