k4s560832j Samsung Semiconductor, Inc., k4s560832j Datasheet
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k4s560832j
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... K4S560432J K4S560832J K4S561632J 256Mb J-die SDRAM Specification 54 TSOP-II with Lead-Free & Halogen-Free INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE, EXPRESS OR IMPLIED, BY ESTOPPEL OR OTHERWISE, TO ANY INTELLECTUAL PROPERTY RIGHTS IN SAMSUNG PRODUCTS OR TECHNOLOGY. ALL INFORMATION IN THIS DOCUMENT IS PROVIDED ON AS " ...
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... K4S560432J K4S560832J K4S561632J Table of Contents 1.0 Features ....................................................................................................................................... 4 2.0 General Description ................................................................................................................... 4 3.0 Ordering Information .................................................................................................................. 4 4.0 Package Physical Dimension ................................................................................................... 5 5.0 Functional Block Diagram......................................................................................................... 6 6.0 Pin Configuration (Top view) ..................................................................................................... 7 7.0 Pin Function Description ........................................................................................................... 7 8.0 Absolute Maximum Ratings........................................................................................................8 9.0 DC Operating Conditions ........................................................................................................... 8 10.0 Capacitance............................................................................................................................... 8 11.0 DC Characteristics (x4, x8) ......................................................................................................9 12.0 DC Characteristics (x16) ........................................................................................................10 13.0 AC Operating Test Conditions ...............................................................................................11 14.0 Operating AC Parameter ........................................................................................................11 15 ...
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... K4S560432J K4S560832J K4S561632J Revision History \ Revision Month 1.0 June 1.1 October 1.2 January 1.21 March Year 2007 - Release 1.0 version SPEC - Changed IDD current SPEC 2007 - Revised typo of package dimension - Added the comment of Halogen-free supporting 2008 - Added 200Mhz speed - Added Package pin out lead width 2008 ...
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... RoHS compliant 2.0 General Description The K4S560432J / K4S560832J / K4S561632J is 268,435,456 bits synchronous high data rate Dynamic RAM organized 16,777,216 words by 4 bits / 4 x 8,388,608 words by 8bits / 4 x 4,194,304 words by 16bits, fabricated with SAMSUNG's high perfor- mance CMOS technology. Synchronous design allows precise cycle control with the use of system clock I/O transactions are possible on every clock cycle ...
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... K4S560432J K4S560832J K4S561632J 4.0 Package Physical Dimension #54 #1 (1.50) 0.80TYP (0.71) [0.80 0.08] ± NOTE REFERENCE Detail ASS’Y OUT QUALITY #28 #27 22.22 0.10 ± (10°) (10°) Detail A Detail B Detail B +0.10 +0.10 0.30 0.35 - 0.05 - 0.05 54Pin TSOP(II) Package Dimension Synchronous DRAM +0.075 0.125 - 0.035 0.10 MAX [ [ 0.075 MAX Rev. 1.21 March 2008 Unit : mm 0.25TYP (0° ...
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... K4S560432J K4S560832J K4S561632J 5.0 Functional Block Diagram Bank Select CLK ADD LCKE LRAS LCBR CLK CKE * Samsung Electronics reserves the right to change products or specification without notice. Data Input Register 16M 16M 16M ...
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... K4S560432J K4S560832J K4S561632J 6.0 Pin Configuration (Top view) x8 x16 DQ0 DQ0 V V DDQ DDQ DQ1 N.C DQ2 DQ1 V V SSQ SSQ DQ3 N.C DQ4 DQ2 V V DDQ DDQ DQ5 N.C DQ6 DQ3 V V SSQ SSQ DQ7 N LDQM N CAS CAS RAS ...
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... K4S560432J K4S560832J K4S561632J 8.0 Absolute Maximum Ratings Parameter Voltage on any pin relative to Vss Voltage on V supply relative to Vss DD Storage temperature Power dissipation Short circuit current Note : Permanent device damage may occur if "ABSOLUTE MAXIMUM RATINGS" are exceeded. Functional operation should be restricted to recommended operating condition. ...
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... K4S560432J K4S560832J K4S561632J 11.0 DC Characteristics (x4, x8) Parameter Symbol Operating current I CC1 (One bank active CC2 Precharge standby current in power-down mode PS CKE & CLK ≤ CC2 I N CC2 Precharge standby current in non power-down mode I NS CC2 I P Active standby current in CC3 power-down mode PS CKE & ...
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... K4S560432J K4S560832J K4S561632J 12.0 DC Characteristics (x16) (Recommended operating condition unless otherwise noted, T Parameter Symbol Operating current I CC1 (One bank active CC2 Precharge standby current in power-down mode I PS CKE & CLK CC2 I N CC2 Precharge standby current in non power-down mode I NS CC2 ...
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... K4S560432J K4S560832J K4S561632J 13.0 AC Operating Test Conditions Parameter AC input levels (Vih/Vil) Input timing measurement reference level Input rise and fall time Output timing measurement reference level Output load condition 3.3V 1200Ω Output 50pF 870Ω (Fig output load circuit 14.0 Operating AC Parameter ...
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... K4S560432J K4S560832J K4S561632J 15.0 AC Characteristics Parameter CAS latency=3 CLK cycle time CAS latency=2 CAS latency=3 CLK to valid output delay CAS latency=2 CAS latency=3 Output data hold time CAS latency=2 CLK high pulse width CLK low pulse width Input setup time Input hold time ...
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... K4S560432J K4S560832J K4S561632J 17.0 IBIS SPECIFICATION I Characteristics (Pull-up) OH 166MHz Voltage 133MHz Min (V) I (mA) 3.45 3.3 3.0 0.0 2.6 -21.1 2.4 -34.1 2.0 -58.7 1.8 -67.3 1.65 -73.0 1.5 -77.9 1.4 -80.8 1.0 -88.6 0.0 -93.0 I Characteristics (Pull-down) OL 166MHz Voltage 133MHz Min (V) I (mA) 0.0 0.0 0.4 27.5 0.65 41.8 0.85 51.6 1.0 58.0 1.4 70.7 1.5 72.9 1.65 75.4 1.8 77.0 1.95 77.6 3.0 80.3 3.45 81 166MHz 133MHz Max -100 I (mA) -2.4 -200 -27.3 -74.1 -129.2 -300 -153.3 -197.0 -400 -226.2 -248.0 -269.7 -500 -284.3 -344.5 -600 -502.4 250 ...
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... K4S560432J K4S560832J K4S561632J V Clamp @ CLK, CKE, CS, DQM & (V) I (mA) DD 0.0 0.0 0.2 0.0 0.4 0.0 0.6 0.0 0.7 0.0 0.8 0.0 0.9 0.0 1.0 0.23 1.2 1.34 1.4 3.02 1.6 5.06 1.8 7.35 2.0 9.83 2.2 12.48 2.4 15.30 2.6 18.31 V Clamp @ CLK, CKE, CS, DQM & (V) I (mA) SS -2.6 -57.23 -2.4 -45.77 -2.2 -38.26 -2.0 -31.22 -1.8 -24.58 -1.6 -18.37 -1.4 -12.56 -1.2 -7.57 -1.0 -3.37 -0.9 -1.75 -0.8 -0.58 -0.7 -0.05 -0.6 0.0 -0.4 0.0 -0.2 0.0 0.0 0.0 Synchronous DRAM Minimum V clamp current DD (Referenced Voltage I (mA) Minimum V clamp current -10 -20 -30 -40 -50 ...
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... K4S560432J K4S560832J K4S561632J 18.0 Simplified Truth Table Command Register Mode register set Auto refresh Entry Refresh Self refresh Exit Bank active & row addr. Read & Auto precharge disable column address Auto precharge enable Write & Auto precharge disable column address Auto precharge enable ...