k4s560832j Samsung Semiconductor, Inc., k4s560832j Datasheet - Page 8

• Manufacturer Part Number: k4s560832j
• Description: 256mb J-die Sdram
• Manufacturer: Samsung Semiconductor, Inc.

K4S560432J
K4S560832J
K4S561632J
Note :
Recommended operating conditions (Voltage referenced to V
Notes :
8.0 Absolute Maximum Ratings
Voltage on any pin relative to Vss
Voltage on V
Storage temperature
Power dissipation
Short circuit current
9.0 DC Operating Conditions
10.0 Capacitance
Supply voltage
Input logic high voltage
Input logic low voltage
Output logic high voltage
Output logic low voltage
Input leakage current
Clock
RAS, CAS, WE, CS, CKE, DQM
Address
(x4 : DQ
Permanent device damage may occur if "ABSOLUTE MAXIMUM RATINGS" are exceeded.
Functional operation should be restricted to recommended operating condition.
Exposure to higher than recommended voltage for extended periods of time could affect device reliability.
1. V
2. V
3. Any input 0V ≤ V
Parameter
0
~ DQ
Input leakage currents include Hi-Z output leakage for all bi-directional buffers with Tri-State outputs.
IH
IL
DD
Parameter
(min) = -2.0V AC. The undershoot voltage duration is ≤ 3ns.
(max) = 5.6V AC. The overshoot voltage duration is ≤ 3ns.
supply relative to Vss
3
), (x8 : DQ
0
IN
~ DQ
≤ V
Pin
DDQ
7
), (x16 : DQ
V
Symbol
DD
.
V
V
V
V
, V
I
OH
OL
LI
IH
IL
DDQ
0
~ DQ
V
15
V
Symbol
Min
-0.3
DD
-10
3.0
2.0
2.4
IN
)
-
T
, V
I
, V
P
STG
OS
D
OUT
DDQ
SS
= 0V, T
Symbol
A
C
C
C
Typ
3.3
3.0
C
= 0 to 70°C)
0
ADD
OUT
-
-
-
CLK
IN
(V
DD
= 3.3V, T
V
DD
Max
-55 ~ +150
3.6
0.8
0.4
-1.0 ~ 4.6
-1.0 ~ 4.6
10
-
Min
+0.3
2.5
2.5
2.5
4.0
Value
50
A
1
= 23°C, f = 1MHz, V
Synchronous DRAM
Rev. 1.21 March 2008
Unit
uA
V
V
V
V
V
Max
3.5
3.8
3.8
6.0
REF
=1.4V ± 200 mV)
I
I
OH
OL
Unit
mA
°C
W
V
V
Note
= -2mA
= 2mA
Unit
1
2
3
pF
pF
pF
pF