k4s560832e-nl75 Samsung Semiconductor, Inc., k4s560832e-nl75 Datasheet - Page 8

• Manufacturer Part Number: k4s560832e-nl75
• Description: 256mb E-die Sdram Specification 54pin Stsop-ii
• Manufacturer: Samsung Semiconductor, Inc.

(Recommended operating condition unless otherwise noted, T
DC CHARACTERISTICS (x4, x8)
SDRAM 256Mb E-die (x4, x8)
SDRAM 256Mb E-die (x4, x8
Operating current
(One bank active)
Precharge standby current in
power-down mode
Precharge standby current in
non power-down mode
Active standby current in
power-down mode
Active standby current in
non power-down mode
(One bank active)
Operating current
(Burst mode)
Refresh current
Self refresh current
Notes :
Parameter
1. Measured with outputs open.
2. Refresh period is 64ms.
3. K4S5604(08)32E-NC75
4. K4S5604(08)32E-NL75
5. Unless otherwise noticed, input swing level is CMOS(V
Symbol
I
I
I
I
CC2
I
CC2
CC3
I
CC3
I
I
CC2
CC2
CC3
CC3
I
I
I
I
CC1
CC4
CC5
CC6
NS
NS
PS CKE & CLK dV
PS CKE & CLK dV
P
N
P
N
CKE dV
CKE tV
Input signals are changed one time during 20ns
CKE tV
Input signals are stable
CKE dV
CKE tV
Input signals are changed one time during 20ns
CKE tV
Input signals are stable
4banks Activated.
t
t
CKE d0.2V
Burst length = 1
t
I
I
Page burst
CCD
RC
RC
O
O
= 0 mA
= 0 mA
tt
tt
= 2CLKs
RC
RC
IL
IH
IH
IL
IH
IH
(min)
(min)
(max), t
(max), t
(min), CS tV
(min), CLK dV
(min), CS tV
(min), CLK dV
IL
IL
Test Condition
(max), t
(max), t
CC
CC
A
= 10ns
= 10ns
= 0 to 70qC)
IH
IH
CC
CC
IL
IL
(min), t
(min), t
IH
(max), t
(max), t
/V
= f
= f
IL
=V
CC
CC
DDQ
CC
CC
= 10ns
= 10ns
= f
= f
/V
C
L
SSQ
).
Rev. 1.1 February, 2004
Version
100
180
1.5
75
80
20
10
25
25
2
2
6
6
3
CMOS SDRAM
Unit
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
Note
1
1
2
3
4