mt8lsdt3264ay-13e Micron Semiconductor Products, mt8lsdt3264ay-13e Datasheet - Page 26

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mt8lsdt3264ay-13e

Manufacturer Part Number
mt8lsdt3264ay-13e
Description
256mb X64, Sr , 512mb X64, Dr 168-pin Sdram Udimm
Manufacturer
Micron Semiconductor Products
Datasheet
Table 23:
PDF: 09005aef807b3771/Source: 09005aef807b37b5
SD8_16C32_64x64AG.fm - Rev. D 3/05 EN
99-125
36-40
42-61
65-71
73-90
95-98
Byte
126
127
33
34
35
41
62
63
64
72
91
92
93
94
Description
Command And Address Hold Time,
Data Signal Input Setup Time,
Data Signal Input Hold Time,
Reserved
Device Minimum Active/Auto-Refresh Time,
Reserved
SPD Revision
Checksum For Bytes 0–62
Manufacturer’s JEDEC ID Code
Manufacturer’s JEDEC ID Code (Cont.)
Manufacturing Location
Module Part Number (ASCII)
Pcb Identification Code
Identification Code (Cont.)
Year of Manufacture In BCD
Week of Manufacture In BCD
Module Serial Number
Manufacturer-specific Data (RSVD)
System Frequency
Sdram Component & Clock Detail
Serial Presence-Detect Matrix
V
DD
= +3.3V ±0.3V; “1”/“0”: Serial Data, “driven to HIGH”/“driven to LOW”
Notes: 1. The value of
value is 37ns.
t
DH
t
256MB (x64, SR), 512MB (x64, DR) 168-Pin SDRAM UDIMM
DS
t
RAS used for -13E modules is calculated from
t
AH,
t
CMH
t
RC
26
0.8ns (-13E/-133)
1.5ns (-13E/-133)
0.8ns (-13E/-133)
100 MHz (-13E/
60ns (-13E)
66ns (-133)
70ns (10E)
-133/-10E)
1ns (-10E)
2ns (-10E)
1ns (-10E)
(Version
MICRON
REV. 1.2
Entry
(-13E)
(-133)
(-10E)
Micron Technology, Inc., reserves the right to change products or specifications without notice.
0
MT8LSDT3264A
Variable Data
Variable Data
Variable Data
Variable Data
01 - 06
01-04
3C
B7
2C
AF
08
10
15
20
08
10
00
42
46
00
12
03
4F
00
64
FF
Serial Presence-Detect
t
RC -
©2003 Micron Technology, Inc. All rights reserved.
t
RP. Actual device spec.
MT16LSDT6464A
Variable Data
Variable Data
Variable Data
Variable Data
01 - 06
01-04
3C
B8
2C
08
10
15
20
08
10
00
42
46
00
12
04
50
00
64
FF
FF

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