mt18htf25672fdy-80e Micron Semiconductor Products, mt18htf25672fdy-80e Datasheet - Page 12

• Manufacturer Part Number: mt18htf25672fdy-80e
• Description: 1gb, 2gb X72, Dr 240-pin Ddr2 Sdram Fbdimm Dr, Fb, X72
• Manufacturer: Micron Semiconductor Products

Table 19:
PDF: 09005aef81a2f237/Source: 09005aef81a2f25b
HTF18C128_256x72FD.fm - Rev. C 9/07 EN
Byte
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
26
27
28
29
30
31
32
0
1
2
3
4
5
6
7
8
9
Description
SPD revision
Key byte/DRAM device type
Voltage levels of this assembly
SDRAM addressing: Device rows/columns/banks
Module physical attributes: Height/thickness
Module type
Module organization: Module ranks/SDRAM device width (I/O)
Fine timebase dividend and divisor
Medium timebase dividend
Medium timebase divisor
SDRAM MIN cycle time (
SDRAM MAX cycle time (
SDRAM CAS latencies supported
SDRAM MIN CL time (
SDRAM WRITE recovery times supported
SDRAM WRITE recovery time (
SDRAM WRITE latencies supported
SDRAM additive latencies supported
SDRAM MIN RAS-to-CAS delay (
SDRAM MIN row active-to-row active delay (
SDRAM MIN row precharge time (
SDRAM upper nibbles for
SDRAM MIN active to precharge time (
SDRAM MIN auto refresh-to-active/auto refresh time (
SDRAM MIN AUTO REFRESH-to-ACTIVE/AUTO REFRESH command
period (
SDRAM MIN AUTO REFRESH-to-ACTIVE/AUTO REFRESH command
period (
SDRAM internal WRITE-to-READ command delay (
SDRAM internal READ-to-PRECHARGE command delay (
SDRAM burst lengths supported
SDRAM drivers/terminations supported: 03 = 75Ω and 100Ω;
07 = 50Ω, 75Ω, and 100Ω
Drivers supported
SDRAM refresh rate (
CRC range/SPD bytes total/bytes used
Serial Presence-Detect Matrix – SDRAM Device and Module
t
t
RFC-LSB)
RFC-MSB)
t
t
REFI) and 95°C self-refresh
CAS)
t
CK [MIN])
t
CK [MAX])
t
RAS and
t
WR)
t
RCD)
t
RP)
t
RC
t
RAS)
1GB, 2GB (x72, DR) 240-Pin DDR2 SDRAM FBDIMM
t
RRD)
12
t
WTR)
t
RC)
t
RTP)
Micron Technology, Inc., reserves the right to change products or specifications without notice.
4 banks or 8 banks
15ns (-667/-53E)
15ns (-667/-53E)
15ns (-667/-53E)
DDR2 FBDIMM
127.5ns (2GB)
Weak drivers
Dual rank/x8
3.75ns (-53E)
12.5ns (-80E)
12.5ns (-80E)
12.5ns (-80E)
Bytes 0–116/
5, 4, 3 (-667)
DRAM/AMB
10 columns/
1/4 = 0.25ns
1/4 = 0.25ns
Range, MIN
Range, MIN
Range, MIN
105ns (1GB)
2.5ns (-80E)
3.0ns (-667)
256 bytes/
30.35mm/
5, 4 (-80E)
4, 3 (-53E)
176 bytes
-80E/-667
FBDIMM
7.16mm
14 rows/
Entry
5.0ps
7.5ns
7.5ns
7.8µs
15ns
40ns
55ns
-53E
8ns
4, 8
1.1
–
–
Serial Presence-Detect
©2005 Micron Technology, Inc. All rights reserved.
1GB
DC
0A
A4
92
11
09
12
44
23
07
11
51
01
04
0C
0F
20
24
33
23
32
3C
22
3C
42
40
32
3C
1E
32
3C
00
B4
01
1E
1E
03
07
03
01
C2
2GB
0A
DC
92
11
09
12
45
23
07
11
51
01
04
0C
20
24
33
23
32
3C
22
3C
42
40
32
3C
1E
32
3C
00
B4
01
1E
1E
03
07
03
01
C2
0F
FE