mt18htf25672fdy-80e Micron Semiconductor Products, mt18htf25672fdy-80e Datasheet - Page 13

• Manufacturer Part Number: mt18htf25672fdy-80e
• Description: 1gb, 2gb X72, Dr 240-pin Ddr2 Sdram Fbdimm Dr, Fb, X72
• Manufacturer: Micron Semiconductor Products

Table 19:
PDF: 09005aef81a2f237/Source: 09005aef81a2f25b
HTF18C128_256x72FD.fm - Rev. C 9/07 EN
120–121
122–125
128–145
146–147
148–149
152–175
176–255
42–78
Byte
117
118
119
33
34
35
36
37
38
39
40
41
79
Description
Bits 7:4: ΔT
MAX case temperature and baseline MAX case temperature), the
baseline MAX case temperature is 85°C; Bits 3:0: DT4R4W Δ (case
temperature rise difference between I
READ and I
Thermal resistance of DRAM device package from top (case) to
ambient (PSI T-A DRAM) at still air condition based on JESD51-2
standard
DT0/T
due to I
temperature; Bit 1: Double refresh mode bit; Bit 0: High
temperature self-refresh rate support indication
DT2N/DT2Q: Case temperature rise from ambient due to
I
I
DT2P: Case temperature rise from ambient due to I
PRECHARGE POWER-DOWN operation
DT3N: Case temperature rise from ambient due to I
STANDBY operation
DT4R/mode bit, bits 7:1: Case temperature rise from ambient due
to I
specify if DT4W is greater or less than DT4R
DT5B: Case temperature rise from ambient due to I
REFRESH operation
DT7: Case temperature rise from ambient due to I
interleave READ MODE operation
FBDIMM reserved bytes
FBDIMM ODT definition
Module ID: Module manufacturer’s JEDEC ID code
Module ID: Module manufacturer’s JEDEC ID code
Module ID: Module manufacturing location
Module ID: Module manufacturing date
Module ID: Module serial number
Module part number
Module revision code
DRAM manufacturer’s JEDEC ID code
Reserved for manufacturer-specific data
Reserved for customer-specific data
DD
DD
Serial Presence-Detect Matrix – SDRAM Device and Module (continued)
2N precharge STANDBY operation for UDIMM and due to
2Q/precharge quiet STANDBY operation for RDIMM
DD
C
4R/page open BURST READ operation; Bit 0: Mode bit to
mode bits: Bits 7:2: Case temperature rise from ambient
DD
0/ACTIVATE PRECHARGE operation minus 2.8°C offset
C
DD
(MAX) (DRAM case temperature difference between
4W/page open burst WRITE operations)
DD
1GB, 2GB (x72, DR) 240-Pin DDR2 SDRAM FBDIMM
4R/page open burst
13
DD
DD
DD
DD
7/bank
2P/
5B/BURST
3N/ACTIVE
Micron Technology, Inc., reserves the right to change products or specifications without notice.
MICRON
MICRON
MICRON
Entry
1–12
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
Serial Presence-Detect
©2005 Micron Technology, Inc. All rights reserved.
Variable
Variable
Variable
Variable
01–0C
802C
data
data
data
data
1GB
0A
0D
52
32
04
0E
18
0F
12
00
22
80
2C
FF
FF
Variable
Variable
Variable
Variable
01–0C
802C
data
data
data
data
2GB
0A
51
31
04
0B
18
12
15
00
22
80
2C
0F
FF
FF