mt18htf25672fy-667 Micron Semiconductor Products, mt18htf25672fy-667 Datasheet

no-image

mt18htf25672fy-667

Manufacturer Part Number
mt18htf25672fy-667
Description
1gb, 2gb X72, Sr 240-pin Ddr2 Sdram Fbdimm
Manufacturer
Micron Semiconductor Products
Datasheet
Table 1:
DDR2 SDRAM FBDIMM
MT18HTF12872F – 1GB
MT18HTF25672F – 2GB
For the latest data sheets and technical notes, refer to Micron’s Web site:
Features
• 240-pin, DDR2 fully buffered dual in-line memory
• Fast data transfer rates: PC2-4200, PC2-5300, and
• 1GB (128 Meg x 72), 2GB (256 Meg x 72)
• 3.2 Gb/s, 4.0 Gb/s, and 4.8 Gb/s link transfer rates
• High-speed, differential, point-to-point link
• Fault-tolerant; can work around a bad bit lane in
• High-density scaling with up to eight FBDIMMs per
• SMBus interface to AMB for configuration register
• In-band and out-of-band command access
• Deterministic protocol
• Automatic DDR2 SDRAM bus and channel
• Transmitter de-emphasis to reduce ISI
• MBIST and IBIST test functions
• Transparent mode for DRAM test support
• V
• V
• V
• V
• Serial presence-detect (SPD) with EEPROM
• Gold edge contacts
• Single rank
pdf: 09005aef81a2f214/source: 09005aef81a2f22d
HTF18C64_128_256x72F.fm - Rev. B 9/07 EN
Speed
module (FBDIMM)
PC2-6400
between host controller and advanced memory
buffer (AMB)
each direction
channel
access
– Enables memory controller optimization of DRAM
– Delivers precise control and repeatable memory
calibration
termination
Grade
-80E
-667
-53E
REF
DD
CC
DDSPD
accesses for maximum performance
behavior
= 1.5V for AMB
= V
= 0.9V SDRAM command and address
DD
= +3.0V to +3.6V for AMB and EEPROM
Q = +1.8V for DDR2 SDRAM
Key Timing Parameters
Industry Nomenclature
Products and specifications discussed herein are subject to change by Micron without notice.
PC2-6400
PC2-5300
PC2-4200
CL = 5
800
667
1GB, 2GB (x72, SR) 240-Pin DDR2 SDRAM FBDIMM
Data Rate (MT/s)
1
CL = 4
Figure 1:
Notes: 1. Not recommended for new designs.
Options
• Package
• Frequency/CAS latency
533
533
533
PCB height: 30.35mm (1.19in)
– 240-pin DIMM (Pb-free)
– 2.5ns @ CL = 5 (DDR2-800)
– 3.0ns @ CL = 5 (DDR2-667)
– 3.75ns @ CL = 4 (DDR2-533)
Micron Technology, Inc., reserves the right to change products or specifications without notice.
www.micron.com
CL = 3
400
400
240-Pin FBDIMM (MO-256 R/C C)
t
(ns)
12.5
RCD
15
15
©2005 Micron Technology, Inc. All rights reserved.
1
(ns)
12.5
t
15
15
RP
Marking
Features
-80E
-667
-53E
Y
(ns)
t
55
55
55
RC

Related parts for mt18htf25672fy-667

mt18htf25672fy-667 Summary of contents

Page 1

... For the latest data sheets and technical notes, refer to Micron’s Web site: Features • 240-pin, DDR2 fully buffered dual in-line memory module (FBDIMM) • Fast data transfer rates: PC2-4200, PC2-5300, and PC2-6400 • 1GB (128 Meg x 72), 2GB (256 Meg x 72) • ...

Page 2

... Data sheets for the base devices can be found on Micron’s Web site. 2. All part numbers end with a four-place code (not shown) that designates component, PCB, and AMB revisions. Consult factory for current revision codes. Example: MT18HTF25672FY-667E1D4. pdf: 09005aef81a2f214/source: 09005aef81a2f22d HTF18C64_128_256x72F.fm - Rev. B 9/07 EN ...

Page 3

Pin Assignments and Descriptions Table 5: Pin Assignments 240-Pin FBDIMM Front Pin Symbol Pin Symbol Pin Symbol Pin Symbol PN3 PN3 ...

Page 4

... The M_TEST pin provides an external connection for testing the margin of V produced by a voltage divider on the module not intended to be used in normal system operation and must not be connected (DNU system. This test pin may have other features on future card designs and will be included in this specification at that time. ...

Page 5

... Micron Technology, Inc., reserves the right to change products or specifications without notice. 5 Block Diagrams Commodity DDR2 DDR2 SDRAM component devices DDR2 component DDR2 component DDR2 component Up to eight modules AMB • • • DDR2 component DDR2 component DDR2 component DDR2 component SMBus access to buffer registers ©2005 Micron Technology, Inc. All rights reserved. ...

Page 6

Functional Block Diagram Figure 3: Functional Block Diagram V SS CS0# DQS0 DQS0# DQ0 DQ1 DQ2 DQ3 DQS9 DQS9# DQ4 DQ5 DQ6 DQ7 DQS1 DQS1# DQ8 DQ9 DQ10 DQ11 DQS10 DQS10# DQ12 DQ13 DQ14 DQ15 DQS2 DQS2# DQ16 DQ17 DQ18 ...

Page 7

... Serial Presence-Detect (SPD) for Fully Buffered DIMM – JEDEC Standard No. 21-C page 4.1.2.7-1 The MT18HTF12872F and MT18HTF25672F DDR2 SDRAM modules are a high-band- width, large-capacity channel solution that have a narrow host interface. FBDIMMs use DDR2 SDRAM devices isolated from the channel behind an AMB buffer on the FBDIMM ...

Page 8

... Electrical Specifications Stresses greater than those listed in Table 7 may cause permanent damage to the module. This is a stress rating only, and functional operation of the module at these or any other conditions outside those indicated in the device data sheet is not implied. Exposure to absolute maximum rating conditions for extended periods may adversely affect reliability ...

Page 9

I Conditions and Specifications DD Table 10: I Conditions DD Symbol Condition I _Idle_0 Idle current, single, or last DIMM: L0 state; Idle (0 percent bandwidth); Primary channel DD enabled; Secondary channel disabled; CKE HIGH; Command and address lines stable; ...

Page 10

Table 14: I Specifications – 2GB DDR2-533 DD Symbol I _Idle_0 2,200 CC I 1,620 DD 6.5 Total power Table 15: I Specifications – 2GB DDR2-667 DD Symbol I _Idle_0 2,600 CC ...

Page 11

Serial Presence-Detect Table 17: Serial Presence-Detect EEPROM DC Operating Conditions Parameter/Condition Supply voltage Input high voltage: logic 1; all inputs Input low voltage: logic 0; all inputs Output low voltage 3mA OUT Input leakage current GND ...

Page 12

... Table 19: Serial Presence-Detect Matrix – SDRAM Device and Module Byte Description 0 CRC range SPD bytes total Bytes used 1 SPD revision 2 Key byte/DRAM device type 3 Voltage levels of this assembly 4 SDRAM addressing: Device rows/columns/banks 5 Module physical attributes: Height/thickness 6 Module type 7 Module organization: Module ranks/SDRAM device width (I/O) ...

Page 13

... Table 19: Serial Presence-Detect Matrix – SDRAM Device and Module (continued) Byte Description Bits 7:4: ΔT 33 (MAX) (DRAM case temperature difference between C MAX case temperature and baseline MAX case temperature), the baseline MAX case temperature is 85°C; Bits 3:0: DT4R4W Δ (case temperature rise difference between I ...

Page 14

Table 20: Serial Presence-Detect – AMB and CRC Byte Description 80 FBDIMM reserved byte 81 Channel protocol supported (lower byte) 82 Channel protocol supported (upper byte) 83 Back-to-back turnaround clock cycles t 84 Buffer read access at CK for MAX ...

Page 15

Table 20: Serial Presence-Detect – AMB and CRC (continued) Byte Description 114 AMB postinitialization bytes 115 AMB manufacturer’s ID code (lower byte) 116 AMB manufacturer’s ID code (upper byte) 126–127 CRC for bytes 0–116, 1GB/2GB 150 Informal AMB revision tag ...

Page 16

... Back view with heat spreader U14 U15 U12 U12 U12 U13 U17 U17 U17 U20 ® their respective owners. characterization sometimes occur. 16 Module Dimensions 5.1 (0.201) 2.0 (0.079) TYP U8 U9 30.5 (1.201) 30.2 (1.189) 17.3 (0.681) TYP 9.5 (0.374) TYP 1.37 (0.054) 1.17 (0.046) 3.9 (0.153) TYP (x2) Pin 120 45° x 0.18 (0.0071) 1 ...

Related keywords