mt18vddt12872ag-40b Micron Semiconductor Products, mt18vddt12872ag-40b Datasheet - Page 5
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mt18vddt12872ag-40b
Manufacturer Part Number
mt18vddt12872ag-40b
Description
256mb, 512mb, 1gb, 2gb X72, Ecc, Dr 184-pin Ddr Sdram Udimm
Manufacturer
Micron Semiconductor Products
Datasheet
1.MT18VDDT12872AG-40B.pdf
(14 pages)
Table 8:
PDF: 09005aef80814e61/Source: 09005aef807f8acb
DD18C32_64_128_256x72A.fm - Rev. C 10/07 EN
WE#, CAS#, RAS#
DQS0–DQS8
CKE0, CKE1
DQ0–DQ63
CK0, CK0#,
CK1, CK1#,
DM0–DM8
CK2, CK2#
V
BA0, BA1
SA0–SA2
CB0–CB7
Symbol
S0#, S1#
A0–A13
DD
V
Pin Descriptions
SDA
DDSPD
V
SCL
V
NC
/V
REF
SS
DD
Q
256MB, 512MB, 1GB, 2GB (x72, ECC, DR) 184-Pin DDR SDRAM UDIMM
Supply
Supply
Supply
Supply
Input
Input
Input
Input
Input
Input
Input
Input
Input
Type
I/O
I/O
I/O
I/O
–
Description
Address inputs: Provide the row address for ACTIVE commands, and the
column address and auto precharge bit (A10) for READ/WRITE commands, to
select one location out of the memory array in the respective device bank. A10
sampled during a PRECHARGE command determines whether the PRECHARGE
applies to one device bank (A10 LOW, device bank selected by BA0, BA1) or all
device banks (A10 HIGH). The address inputs also provide the op-code during a
MODE REGISTER SET command. BA0 and BA1 define which mode register
(mode register or extended mode register) is loaded during the LOAD MODE
REGISTER command. A0–A11 (256MB), A0–A12 (512MB, 1GB), and
A0–A13 (2GB).
Bank address: BA0 and BA1 define to which device bank an ACTIVE, READ,
WRITE, or PRECHARGE command is being applied.
Clock: CK and CK# are differential clock inputs. All address and control input
signals are sampled on the crossing of the positive edge of CK and the
negative edge of CK#. Output data (DQ and DQS) is referenced to the
crossings of CK and CK#.
Clock enable: CKE (registered HIGH) activates and CKE (registered LOW)
deactivates the internal clock, input buffers, and output drivers.
Input data mask: DM is an input mask signal for write data. Input data is
masked when DM is sampled HIGH, along with that input data, during a write
access. DM is sampled on both edges of DQS. Although DM pins are input-only,
the DM loading is designed to match that of DQ and DQS pins.
Chip selects: S# (registered LOW) enables and S# (registered HIGH) disables
the command decoder. All commands are masked when S# is registered HIGH.
S# is considered part of the command code.
Presence-detect address inputs: These pins are used to configure the
presence-detect device.
Serial clock for presence-detect: SCL is used to synchronize the presence-
detect data transfer to and from the module.
Command inputs: RAS#, CAS#, and WE# (along with S#) define the command
being entered.
Check bits.
Data input/output: Data bus.
Data strobe: Output with read data, input with write data. DQS is edge-
aligned with read data, center-aligned with write data. Used to capture data.
Serial presence-detect data: SDA is a bidirectional pin used to transfer
addresses and data into and out of the presence-detect portion of the module.
Power supply: +2.5V ±0.2V (-40B: +2.6V ±0.1V).
Serial EEPROM positive power supply: +2.3V to +3.6V.
SSTL_2 reference voltage (V
Ground.
No connect: These pins are not connected on the module.
5
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DD
/2).
Pin Assignments and Descriptions
©2004 Micron Technology, Inc. All rights reserved.