mt8htf3264hdy Micron Semiconductor Products, mt8htf3264hdy Datasheet - Page 12

• Manufacturer Part Number: mt8htf3264hdy
• Description: Module Ddr2 512mb 200-sodimm
• Manufacturer: Micron Semiconductor Products

Table 10: DDR2 I
Values shown for MT47H16M16 DDR2 SDRAM only and are computed from values specified in the 256Mb (16 Meg x 16)
component data sheet
PDF: 09005aef80ebed66
htf8c32_64_128x64hd.pdf - Rev. E 3/10 EN
Parameter
Operating bank interleave read current: All device banks interleaving
reads; I
(I
HIGH between valid commands; Address bus inputs are stable during deselects;
Data bus inputs are switching
DD
),
t
RC =
OUT
= 0mA; BL = 4, CL = CL (I
t
RC (I
DD
),
DD
t
RRD =
Notes:
Specifications and Conditions – 256MB (Continued)
t
RRD (I
1. Value calculated as one module rank in this operating condition; all other module ranks
2. Value calculated reflects all module ranks in this operating condition.
in I
DD
DD
DD2P
),
), AL =
t
RCD =
(CKE LOW) mode.
256MB, 512MB, 1GB (x64, DR) 200-Pin DDR2 SODIMM
t
RCD (I
t
RCD (I
DD
DD
) - 1 ×
); CKE is HIGH, S# is
12
t
CK (I
DD
);
t
CK =
Micron Technology, Inc. reserves the right to change products or specifications without notice.
t
CK
Symbol
I
DD7
1
-667
1020
© 2006 Micron Technology, Inc. All rights reserved.
I
DD
-53E
980
Specifications
-40E
940
Units
mA