mt8htf3264hdy Micron Semiconductor Products, mt8htf3264hdy Datasheet - Page 17

• Manufacturer Part Number: mt8htf3264hdy
• Description: Module Ddr2 512mb 200-sodimm
• Manufacturer: Micron Semiconductor Products

Table 13: DDR2 I
Values shown for MT47H64M16 DDR2 SDRAM only and are computed from values specified in the 1Gb (64 Meg x 16) com-
ponent data sheet
PDF: 09005aef80ebed66
htf8c32_64_128x64hd.pdf - Rev. E 3/10 EN
Parameter
Operating bank interleave read current: All device banks interleaving
reads; I
=
HIGH, S# is HIGH between valid commands; Address bus inputs are stable
during deselects; Data bus inputs are switching
t
CK (I
OUT
DD
),
= 0mA; BL = 4, CL = CL (I
t
RC =
t
RC (I
DD
DD
Specifications and Conditions – 1GB (Die Revision E and G) (Continued)
),
t
RRD =
t
RRD (I
DD
), AL =
DD
),
256MB, 512MB, 1GB (x64, DR) 200-Pin DDR2 SODIMM
t
t
RCD (I
RCD =
DD
t
RCD (I
) - 1 ×
DD
17
t
CK (I
); CKE is
DD
);
t
CK
Micron Technology, Inc. reserves the right to change products or specifications without notice.
Symbol
I
DD7
1
-80E/-
1788
800
1428
-667
© 2006 Micron Technology, Inc. All rights reserved.
I
DD
1348
-53E
Specifications
-40E
1228
Units
mA