mt16vddf6464hg-265 Micron Semiconductor Products, mt16vddf6464hg-265 Datasheet - Page 2

• Manufacturer Part Number: mt16vddf6464hg-265
• Description: 512mb, 1gb X64, Dr 200-pin Ddr Sodimm
• Manufacturer: Micron Semiconductor Products

Table 1:
Table 2:
Table 3:
Table 4:
PDF: 09005aef80a77a90/Source: 09005aef80a646bc
DDF16C64_128x64_L_H.fm - Rev. F 2/08 EN
Part Number
MT16VDDF6464(L)HG-335__
MT16VDDF6464(L)HG-265__
Part Number
MT16VDDF12864(L)HG-335__
Parameter
Refresh count
Device row address
Device bank address
Device configuration
Device column address
Module rank address
Speed
Grade
-335
-265
Key Timing Parameters
Addressing
Part Numbers and Timing Parameters – 512MB
Base device: MT46V32M8,
2
Part Numbers and Timing Parameters – 1GB
Base device: MT46V64M8,
2
Nomenclature
Notes:
Notes:
Industry
PC2700
PC2100
1. The values of
1. Data sheets for the base devices can be found on Micron’s Web site.
2. All part numbers end with a two-place code (not shown) that designates component and
actual DDR SDRAM device specifications are 15ns.
PCB revisions. Consult factory for current revision codes.
Example: MT16VDDF12864(L)HG-335D2.
Module
Density
Module
Density
512MB
512MB
1GB
1
1
256Mb DDR SDRAM
512Mb DDR SDRAM
CL = 2.5
t
RP and
333
266
Data Rate (MT/s)
Configuration
Configuration
128 Meg x 64
64 Meg x 64
64 Meg x 64
t
RCD for -335 modules show 18ns to align with industry specification;
2
CL = 2
512MB, 1GB (x64, DR) 200-Pin DDR SODIMM
266
200
256Mb (32 Meg x 8)
Bandwidth
Bandwidth
Module
Module
2.7 GB/s
2.1 GB/s
2.7 GB/s
8K (A0–A12)
4 (BA0, BA1)
2 (S0#, S1#)
Micron Technology, Inc., reserves the right to change products or specifications without notice.
1K (A0–A9)
512MB
8K
t
(ns)
RCD
18
20
Memory Clock/
Memory Clock/
6.0ns/333 MT/s
7.5ns/266 MT/s
6.0ns/333 MT/s
Data Rate
Data Rate
(ns)
t
18
20
RP
©2003 Micron Technology, Inc. All rights reserved.
512Mb (64 Meg x 8)
2K (A0–A9, A11)
(ns)
t
8K (A0–A12)
4 (BA0, BA1)
60
65
RC
2 (S0#, S1#)
(CL-
(CL-
1GB
Clock Cycles
Clock Cycles
8K
2.5-3-3
2.5-3-3
2.5-3-3
t
t
RCD-
RCD-
Features
Notes
t
t
1
RP)
RP)