mt16vddf6464hg-265 Micron Semiconductor Products, mt16vddf6464hg-265 Datasheet - Page 9

• Manufacturer Part Number: mt16vddf6464hg-265
• Description: 512mb, 1gb X64, Dr 200-pin Ddr Sodimm
• Manufacturer: Micron Semiconductor Products

I
Table 9:
PDF: 09005aef80a77a90/Source: 09005aef80a646bc
DDF16C64_128x64_L_H.fm - Rev. F 2/08 EN
Parameter/Condition
Operating one bank active-precharge current:
bank; Active-precharge;
and DQS inputs changing once per clock cycle; Address and control
inputs changing once every two clock cycles
Operating one bank active-read-precharge current:
bank; Active-read-precharge; BL = 4;
t
once per clock cycle
Precharge power-down standby current: All device banks
idle; Power-down mode;
Idle standby current: CS# = HIGH; All device banks are idle;
t
changing once per clock
Active power-down standby current: One device bank active;
Power-down mode;
Active standby current: CS# = HIGH; CKE = HIGH;
bank active
inputs changing twice per clock cycle; Address and other control
inputs changing once per clock cycle
Operating burst read current: BL = 2;
One device bank active; Address and control inputs changing once
per clock cycle;
Operating burst write current: BL = 2; Continuous burst
writes; One device bank
changing once per clock cycle;
inputs changing twice per clock cycle
Auto refresh burst current
Self refresh current: CKE ≤ 0.2V
Operating bank interleave read current:
interleaving READs
t
change only during active READ or WRITE commands
DD
CK =
CK =
RC = (MIN)
Specifications
t
t
CK (MIN); I
CK (MIN);
;
t
RC allowed;
t
RC =
I
Values are shown for the
256Mb (32 Meg x 8) component data sheet
DD
t
CK =
CKE = HIGH; Address and other control inputs
OUT
Specifications and Conditions – 512MB
t
Notes:
RAS (MAX);
(BL = 4) with auto precharge;
t
t
= 0mA; Address and control inputs
CK =
CK (MIN);
cycle. V
t
CK =
t
active; Address and control inputs
RC =
t
CK =
t
CK (MIN); CKE = LOW
1. Value calculated as one module rank in this operating condition; all other module ranks are
2. Value calculated reflects all module ranks in this operating condition.
3. The standard module guarantees I
t
t
t
CK =
in I
CK (MIN); Address and control inputs
t
CK =
I
RC (MIN);
IN
t
OUT
CK (MIN);
DD
= V
t
= 0mA
2P (CKE LOW) mode.
t
CK (MIN); DQ, DM, and DQS
CK (MIN); DQ, DM, and DQS
REF
t
MT46V32M8
RC =
for DQ, DQS, and DM
Continuous burst reads;
t
CK =
CKE = (LOW)
Four device bank
t
RC (MIN);
t
t
Standard
Low-power
REFC =
REFC = 7.8125µs
t
CK (MIN); DQ, DM,
One device
DDR SDRAM only and are computed from values specified in the
t
One device
RFC (MIN)
One device
changing
9
512MB, 1GB (x64, DR) 200-Pin DDR SODIMM
DD
6 and the low-power module guarantees I
Micron Technology, Inc., reserves the right to change products or specifications without notice.
I
Symbol
DD
I
I
I
I
I
I
I
I
DD
DD
DD
DD
I
I
I
I
DD
DD
DD
DD
DD
DD
DD
DD
6A
4W
3N
4R
6
2P
2F
3P
5A
0
1
5
7
2, 3
1
1
2, 3
2
1
2
2
2
1
2
2
1
1,032
1,392
1,432
1,432
4,080
3,312
-335
800
480
960
64
96
64
32
Electrical Specifications
©2003 Micron Technology, Inc. All rights reserved.
1,192
1,232
1,232
3,760
2,832
-265
992
720
400
800
64
96
64
32
DD
6A.
Units
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA