mt16vddf6464hy-26a Micron Semiconductor Products, mt16vddf6464hy-26a Datasheet - Page 17

• Manufacturer Part Number: mt16vddf6464hy-26a
• Description: 512mb, 1gb X64 200-pin Ddr Sodimm
• Manufacturer: Micron Semiconductor Products

Table 15: DDR SDRAM Component Electrical Characteristics and Recommended AC
Notes: 1–5, 12–15, 29, 40; notes appear on pages 20–23; 0°C £ T
09005aef80a646bc
DDF16C64_128x64HG_B.fm - Rev. B 7/03 EN
AC CHARACTERISTICS
PARAMETER
ACTIVE to ACTIVE/AUTO REFRESH command period
AUTO REFRESH command period
ACTIVE to READ or WRITE delay
PRECHARGE command period
DQS read preamble
DQS read postamble
ACTIVE bank a to ACTIVE bank b command
DQS write preamble
DQS write preamble setup time
DQS write postamble
Write recovery time
Internal WRITE to READ command delay
Data valid output window
REFRESH to REFRESH command interval
Average periodic refresh interval
Terminating voltage delay to V
Exit SELF REFRESH to non-READ command
Exit SELF REFRESH to READ command
Operating Conditions (-335, -262) (Continued)
DD
SYMBOL MIN
t
t
WPRES
t
t
t
t
t
17
t
t
WPRE
WPST
t
t
t
t
XSNR
XSRD
t
RPRE
REFC
RPST
t
WTR
t
RCD
RRD
REFI
VTD
RFC
t
NA
WR
RC
RP
A
£ +70°C; V
0.25
200
Micron Technology, Inc., reserves the right to change products or specifications without notice.
0.9
0.4
0.4
60
72
18
18
12
15
75
t
0
1
0
QH -
-335
DD
t
DQSQ
= V
MAX
70.3
1.1
0.6
0.6
7.8
DD
200-PIN DDR SODIMM
Q = +2.5V ±0.2V
MIN
0.25
200
0.9
0.4
0.4
60
75
15
15
15
15
75
t
0
1
0
512MB, 1GB (x64)
QH -
-262
t
DQSQ
MAX
70.3
1.1
0.6
0.6
7.8
UNITS
©2003 Micron Technology, Inc.
t
t
t
t
t
t
ns
ns
ns
ns
CK
CK
ns
CK
ns
CK
ns
CK
ns
µs
µs
ns
ns
CK
NOTES
18, 19
44
37
17
22
21
21