mt16vddf6464hy-26a Micron Semiconductor Products, mt16vddf6464hy-26a Datasheet - Page 19

• Manufacturer Part Number: mt16vddf6464hy-26a
• Description: 512mb, 1gb X64 200-pin Ddr Sodimm
• Manufacturer: Micron Semiconductor Products

Table 16: DDR SDRAM Component Electrical Characteristics and Recommended AC
Notes: 1–5, 12–15, 29, 40; notes appear on pages 20–23; 0°C £ T
09005aef80a646bc
DDF16C64_128x64HG_B.fm - Rev. B 7/03 EN
AC CHARACTERISTICS
PARAMETER
DQS read preamble
DQS read postamble
ACTIVE bank a to ACTIVE bank b command
DQS write preamble
DQS write preamble setup time
DQS write postamble
Write recovery time
Internal WRITE to READ command delay
Data valid output window
REFRESH to REFRESH command interval
Average periodic refresh interval
Terminating voltage delay to V
Exit SELF REFRESH to non-READ command
Exit SELF REFRESH to READ command
Operating Conditions (-26A, -265, -202) (Continued)
DD
SYMBOL MIN
t
t
WPRES
t
t
t
t
t
t
WPRE
t
WPST
t
t
t
XSNR
XSRD
RPRE
RPST
t
REFC
WTR
RRD
REFI
VTD
NA
WR
19
0.25
200
t
0.9
0.4
0.4
15
15
75
QH -
A
0
1
0
£ +70°C; V
-26A
t
DQSQ
MAX
70.3
1.1
0.6
0.6
7.8
Micron Technology, Inc., reserves the right to change products or specifications without notice.
DD
MIN
0.25
200
t
0.9
0.4
0.4
15
15
75
QH -
= V
0
1
0
-265
DD
t
200-PIN DDR SODIMM
DQSQ
Q = +2.5V ±0.2V
MAX MIN MAX
70.3
1.1
0.6
0.6
7.8
512MB, 1GB (x64)
0.25
t
200
0.9
0.4
0.4
15
15
QH -
80
0
1
0
-202
t
DQSQ
70.3
1.1
0.6
0.6
7.8
UNITS NOTES
©2003 Micron Technology, Inc.
t
t
t
t
t
t
ns
ns
ns
ns
µs
µs
ns
ns
CK
CK
CK
CK
CK
CK
18, 19
37
17
22
21
21