mt16jss51264hy Micron Semiconductor Products, mt16jss51264hy Datasheet - Page 11

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mt16jss51264hy

Manufacturer Part Number
mt16jss51264hy
Description
Ddr3 Sdram Sodimm
Manufacturer
Micron Semiconductor Products
Datasheet
I
Table 10: DDR3 I
Values are for the MT41J512M8THU DDR3 SDRAM only and are computed from values specified in the 4Gb TwinDie (512
Meg x 8) component data sheet
PDF: 09005aef832ed836
jss16c512x64hy.pdf – Rev. C 8/09
Parameter
Operating current 0: One bank ACTIVATE-to-PRECHARGE
Operating current 1: One bank ACTIVATE-to-READ-to-
PRECHARGE
Precharge power-down current: Slow exit
Precharge power-down current: Fast exit
Precharge quiet standby current
Precharge standby current
Precharge standby ODT current
Active power-down current
Active standby current
Burst read operating current
Burst write operating current
Refresh current
Self refresh temperature current: MAX T
Self refresh temperature current (SRT-enabled): MAX T
= 95°C
All banks interleaved read current
Reset current
DD
Specifications
DD
Specifications and Conditions – 4GB
C
= 85°C
C
4GB (x64, DR): 204-Pin DDR3 SDRAM SODIMM
11
Combined
Symbol
I
I
I
I
I
I
I
I
I
I
CDD2NT
I
CDD4W
CDD6ET
I
I
CDD2Q
CDD2N
CDD3N
I
I
I
CDD2P
CDD2P
CDD3P
CDD4R
CDD5B
CDD0
CDD1
CDD6
CDD7
CDD8
Micron Technology, Inc. reserves the right to change products or specifications without notice.
1600
TBD
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TBD
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Electrical Specifications
1333
1056
1736
2056
2136
3056
856
192
376
616
616
776
456
696
144
192
224
©2008 Micron Technology, Inc. All rights reserved.
1066
1416
1736
2056
2696
776
936
192
336
536
536
696
416
576
144
192
224
Units
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA

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