mt16jss51264hy Micron Semiconductor Products, mt16jss51264hy Datasheet - Page 2

• Manufacturer Part Number: mt16jss51264hy
• Description: Ddr3 Sdram Sodimm
• Manufacturer: Micron Semiconductor Products

Table 2: Addressing
Table 3: Part Numbers and Timing Parameters – 4GB Modules
Base device: MT41J512M8THU,
PDF: 09005aef832ed836
jss16c512x64hy.pdf – Rev. C 8/09
Parameter
Refresh count
Row address
Device bank address
Device configuration
Column address
Module rank address
Notes:
MT16JSS51264H(I)Y-1G6__
MT16JSS51264H(I)Y-1G4__
MT16JSS51264H(I)Y-1G1__
Part Number
1. The data sheet for the base device can be found on Micron’s Web site.
2. All part numbers end with a two-place code (not shown) that designates component and PCB revisions. Con-
sult factory for current revision codes. Example: MT16JSS51264HY-1G1D1.
2
1
4Gb TwinDie DDR3 SDRAM
Module
Density
4GB
4GB
4GB
Configuration
512 Meg x 64
512 Meg x 64
512 Meg x 64
4GB (x64, DR): 204-Pin DDR3 SDRAM SODIMM
2
Module Band-
12.8 GB/s
10.6 GB/s
Micron Technology, Inc. reserves the right to change products or specifications without notice.
8.5 GB/s
width
4Gb TwinDie (512 Meg x 8)
1.25ns/1600 MT/s
1.87ns/1066 MT/s
Memory Clock/
1.5ns/1333 MT/s
32K A[14:0]
8 BA[2:0]
1K A[9:0]
2 S#[1:0]
Data Rate
4GB
8K
©2008 Micron Technology, Inc. All rights reserved.
(CL-
Clock Cycles
11-11-11
Features
t
9-9-9
7-7-7
RCD-
t
RP)